Application of ion beam sputtering for high‐resolution electron microscopy

Kanaya, K.; Baba, Norio; Muranaka, Yoshinori; Adachi, Kôichi

doi:10.1002/jemt.1060040102

Cited by 16 publications

(1 citation statement)

References 33 publications

(39 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Sputtering Yield Sputtering Yield as a Function of Incident-Angle of Ion Beam. Sputtering yield S is a function of ion incident-angle 8, and it exhibits the following general characteristics (Kanaya et al, 1986;Oechsner, 1975;Yamamura et al, 1987;Xu et al, 1992) (see Fig. 1): S(8) increases from a minimum, S(Oo), for normal incidence (8 = 001, to a maximum at 8 = Om, and then decreases toward zero as &90".…”

Section: Surface Contour Evolution Under Ion Bombardment Incident Angmentioning

confidence: 99%

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Ishitani

Yaguchi

1996

Microsc. Res. Tech.

111

View full text Add to dashboard Cite

A focused ion beam (FIB) was applied for cross‐sectional sample preparation with both transmission electron microscopes (TEM) and scanning electron microscopes (SEM). The FIB sample preparation has the advantage of high positioning accuracy for cross sections. On the other hand, a broad ion beam (BIB) has been conventionally used for thinning TEM samples. Although both FIB and BIB use energetic ion beams, they are essentially different from each other in many aspects such as beam size, beam current density, incident angle of the beam with respect to cross sections, and beam scanning (i.e., dynamic or static beam). In this study, FIB cross‐sectioning is compared with BIB thinning. We review inherent characteristics such as positioning accuracy and uniformity of cross section, radiation damage, and beam heating. Discussion is held from a viewpoint of ion beam and sample interaction. © 1996 Wiley‐Liss, Inc.

show abstract

Section: Surface Contour Evolution Under Ion Bombardment Incident Angmentioning

confidence: 99%

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Ishitani

Yaguchi

1996

Microsc. Res. Tech.

111

View full text Add to dashboard Cite

show abstract

Digital image processing of crystalline specimens examined by electron microscopy

Kanaya

1988

J. Elec. Microsc. Tech.

Self Cite

View full text Add to dashboard Cite

Crystalline specimens imaged in the electron microscope are analysed using digital processing. Some principles of structural analysis using the method of Fourier decomposition are discussed. Complementary techniques, such as enhancement by gradient and Laplacian operators, have been found useful in analysing electron micrographs. The application of these techniques to some problems in Materials Science and Biology are reviewed. By selecting and phase-correcting spots in the computed diffraction pattern, it was possible to localize atoms, molecules, and their defective arrangement in evaporated gold, sputter-deposited tungsten films, and single crystals of cadmium selenide. Digital processing based on the theory of helical diffraction was used to explore the three-dimensional arrangement of molecules in cellular components of alveolar soft part sarcoma, Hirano bodies, and neurofibrillar tangles in the human brain.

show abstract

Application of ion‐beam etching techniques to the fine structure of biological specimens as examined with a field emission SEM at low voltage

Yonehara¹,

Baba²,

Kanaya³

1989

J. Elec. Microsc. Tech.

Self Cite

View full text Add to dashboard Cite

The term "etching," in electron microscopy, refers to the removal of specimen surface layers and includes chemical, electrolytic, and ion-beam methods. The ion-beam etching process is used to remove layers of a target material by bombarding it with ionized gas molecules. Recently, the method has been applied to the field of biological specimens; however, the practical procedures for such organic materials have not been developed. In the present study, we used an apparatus in which a beam of argon ions is collimated and focused by electrostatic lenses onto an appropriate target. We demonstrated the optimum conditions to observe biological specimens that were treated with osmium tetroxide and tannic acid. The specimens were examined uncoated at low accelerating voltage using a field emission scanning electron microscope. According to our experiments, when a biological specimen was observed under high-resolution conditions at over 50,000x magnification, the optimum condition of ion-beam etching consisted of an accelerating volage of E = 1 keV and an ion-beam dose of It = 360-400 microA.min, depending on parts of the specimens. In order to decrease overetching, we had to choose factors such as E = 1-2 keV and It = 500 microA.min.

show abstract

Application of ion beam sputtering for high‐resolution electron microscopy

Cited by 16 publications

References 33 publications

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Digital image processing of crystalline specimens examined by electron microscopy

Application of ion‐beam etching techniques to the fine structure of biological specimens as examined with a field emission SEM at low voltage

Contact Info

Product

Resources

About