Application of ion scattering spectroscopy to measurement of surface potential of MgO thin film under ion irradiation

Nagatomi, T.; Kuwayama, Takanori; Takai, Yoshizo; Yoshino, K.; Morita, Yosuke; Kitagawa, Masatoshi; Nishitani, Mikihiko

doi:10.1063/1.2888957

Cited by 18 publications

(11 citation statements)

References 21 publications

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“…Therefore, γ is one of the most important parameters of the MgO protective layer for improving the discharge characteristics, 1,6 and the IISE phenomenon in MgO films has been intensively studied. [7][8][9][10][11][12][13][14][15] The magnitude of γ is strongly influenced by the MgO film electronic structure. It has been reported that γ is closely related to defect states 16 and γ increases as the number of surface defect states in MgO increases.…”

Section: Introductionmentioning

confidence: 99%

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Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

et al. 2015

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The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS) energy was located at approximately 4.2 eV above the valence band maximum (VBM) and the surface band gap width (E g S ) was approximately 6.3 eV. The bulk F center (F B ) energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were F S and F B , induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ) for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] To display dynamic images using AC-PDPs, a firing voltage is applied to the electrodes to initiate discharge. Then, ultraviolet photons emitted from the plasma are absorbed in phosphors, and visible photons are generated.…”

Section: Introductionmentioning

confidence: 99%

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

et al. 2015

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“…The base pressure of the apparatus was 7 ϫ 10 −8 Pa. 19 The main purpose of attaching the Ta plate is not to measure ␥ using the Ta plate as the collector electrode of secondary electrons but to reduce the effects of the distortion of the electric field in the ISS measurement. [20][21][22] The samples were MgO films deposited on a Si substrate by electron beam deposition.…”

Section: A Experimental Conditionsmentioning

confidence: 99%

“…In our previous study, 19 we proposed a new technique for measuring the surface potential under positive ion irradiation by ion scattering spectroscopy ͑ISS͒, which is a widely used technique for analyzing the composition of the outermost surface layer. The application of ISS enables the measurement of surface potential without applying a bias voltage to the sample.…”

Section: Introductionmentioning

confidence: 99%

In situ measurement of surface potential developed on MgO thin film surface under ion irradiation using ion scattering spectroscopy

Nagatomi,

Kuwayama,

Yoshino

et al. 2009

Journal of Applied Physics

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The application of ion scattering spectroscopy (ISS) to the in situ measurement of the surface potential developed on an insulator surface under positive ion irradiation was investigated. The ISS spectra measured for a MgO film of 600 nm thickness on a Si substrate by the irradiation of 950 eV He+ ions revealed that the surface is positively charged by approximately 180 V. For accurate measurement of the surface potential, a correction to take into account the angular deflection of primary ions induced by the high surface potential is required. The dependence of the surface potential on the sample temperature revealed that no charging is induced above 700 °C, indicating that accumulated charges can be removed by heating to 700 °C. From the measurement of the ion-induced secondary electron yield using a collector electrode located in front of the sample surface, the surface potential and ion-induced secondary electron yield were found to be strongly affected by the experimental setup. Secondary electrons produced by the impact of slow positive secondary ions, the maximum energy of which corresponds to the surface potential, play an important role when the bias voltage applied to the collector electrode is positively high for the present experimental setup. The surface potential developed on the surface of MgO films of 600 and 200 nm thickness was measured in situ, revealing that the amount of accumulated charges and the time required to attain the steady state of charging are slightly dependent on the beam current of primary ions and strongly dependent on the thickness of the MgO film. The present results confirmed that the application of ISS has high potential for investigating charging phenomena and the secondary electron emission from insulator surfaces under positive ion irradiation.

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“…Более изучены механизмы зарядки диэлектриков под воздействием электронных пучков средних энергий [7], причем как исходных, так и предварительно облученных ионами [8][9][10]. Что касается конкретной ионной зарядки поверхности диэлектрика, то большая часть немногочисленных публикаций посвящена зарядке тонких пленочных мишеней [11][12][13][14][15].…”

Section: Introductionunclassified

Зарядка диэлектриков при бомбардировке ионами Ar-=SUP=-+-=/SUP=- средних энергий

Миннебаев¹,

Рау²,

Татаринцев³

2019

Физика Твердого Тела

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A complex setup for measuring the kinetics of high-voltage potentials of bulk dielectrics charging under irradiated of ions Ar+ with medium energies has been created. Complex measurements of ion-emission characteristics, accumulated charges and surface charging potential showed effective charging to high positive potentials. The measured surface potentials is close in value to the potential of the ion gun. It is assumed that at the early stage of charging in the process of emission, sputtered ions dominate, and in the final stage of irradiation – backscattered. The reported study was funded by RFBR according to the research project № 18-02-00813A

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Application of ion scattering spectroscopy to measurement of surface potential of MgO thin film under ion irradiation

Cited by 18 publications

References 21 publications

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

In situ measurement of surface potential developed on MgO thin film surface under ion irradiation using ion scattering spectroscopy

Зарядка диэлектриков при бомбардировке ионами Ar-=SUP=-+-=/SUP=- средних энергий

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