Application of junction capacitance measurements to the characterization of solar cells

Recart, F.; Cuevas, Andrés

doi:10.1109/ted.2006.870846

Cited by 42 publications

(23 citation statements)

References 25 publications

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“…The value of C j extracted from the simulation is around 205 nF. It has been shown that C j is approximately 70 nF/cm 2 at zero bias for a typical p-n junction solar cell, and the value of C j increases drastically under even a slightly forward bias [18]. Given our sample area of ~1 cm 2 and the relatively low forward bias due to the injection of electrons, the extracted value of 205 nF is consistent within the expected range.…”

Section: Resultsmentioning

confidence: 88%

Single contact electron beam induced current technique for solar cell characterization

Meng

Street

Phang

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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This paper reports the first demonstration of single contact electron beam induced current (SCEBIC) technique on multicrystalline silicon (mc-Si) solar cells. A lumped single-diode analytical model is also proposed to theoretically explain the SCEBIC phenomenon within solar cells as well as the current transient characteristics of the major model parameters, such as shunt resistance R sh , junction capacitance C j , and parasitic capacitance C s . The accuracy of the analytical model is then verified using PSPICE simulations, which show a close match with the experimental results. It is found that a large value of parasitic capacitance C s is necessary to achieve good SCEBIC signal strength with a relatively low signal-to-noise ratio (SNR), and this is realized experimentally by adopting a metal enclosure in the measurement setup. In addition, the advantage of SCEBIC over conventional double-contact method is also demonstrated by SCEBIC characterization of partially processed solar cells, which clearly illustrates the high degree of flexibility of SCEBIC in solar cell characterization.

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Section: Resultsmentioning

confidence: 88%

Single contact electron beam induced current technique for solar cell characterization

Meng

Street

Phang

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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“…Recart and Cuevas [103] conducted capacitance measurements to investigate the enlargement of the junction area induced by a surface texture. They concluded that this effect especially comes into play for large features and could be used to explain enhanced recombination in the space charge region.…”

Section: General Considerations -A Review Of Studies On Alkaline Etchmentioning

confidence: 99%

Nanoimprint lithography for solar cell texturisation

et al. 2010

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The highest efficiency silicon solar cells are fabricated using defined texturing schemes by applying etching masks. However, for an industrial production of solar cells the usage of photolithographic processes to pattern these etching masks is too consumptive. Especially for multicrystalline silicon, there is a huge difference in the quality of the texture realized in high efficiency laboratory scale and maskless industrial scale fabrication. In this work we are describing the topography of a desired texture for solar cell front surfaces. We are investigating UV-nanoimprint lithography (UV-NIL) as a potential technology to substitute photolithography and so to enable the benefits resulting of a defined texture in industrially feasible processes. Besides the reduced process complexity, UV-NIL offers new possibilities in terms of structure shape and resolution of the generated etching mask. As mastering technology for the stamps we need in the UV-NIL, interference lithography is used. The UV-NIL process is conducted using flexible UV-transparent stamps to allow a full wafer process. The following texturisation process is realized via crystal orientation independent plasma etching to tap the full potential of the presented process chain especially for multicrystalline silicon. The textured surfaces are characerised optically using fourier spectroscopy

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“…In this study, MOCVD grown InGaP/InGaAs/Ge 3-J solar cells with and without an InGaAs (QD)/GaAs (barrier) QD structure in the middle cell are shown to be capable of achieving high conversion efficiency. This study used X-ray diffraction (XRD), photoluminescence (PL), optical reflectance, dark and photovoltaic current-voltage (I-V) characteristics, external quantum efficiency (EQE) response, and capacitance-voltage (C-V) as a function of frequency under dark and illuminated conditions to characterize the resulting cells [12][13][14]. Our results demonstrate that highly stacked InGaAs/GaAs QD layers of high quality can be grown with far less degradation in crystal quality and without the use of strain compensation techniques, compared to conventional fabrication techniques.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical characteristics of high‐efficiency InGaP/InGaAs/Ge triple‐junction solar cell incorporated with InGaAs/GaAs QD layers in the middle cell

Lee

Yang

et al. 2015

Progress in Photovoltaics

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This study presents high efficiency InGaP/InGaAs/Ge triple-junction (3-J) solar cells incorporated in the middle cell with layers of InGaAs/GaAs quantum dots (QDs) grown by metal organic chemical vapor deposition to achieve 33.5% conversion efficiency (η) under one-sun AM 1.5 G illumination. We investigated the epitaxial structure and optical and electrical properties of InGaP/InGaAs/Ge 3-J solar cells with and without layers of QDs. We then measured X-ray diffraction (XRD), photoluminescence (PL), optical reflectance, dark and photovoltaic current-voltage (I-V) characteristics, external quantum efficiency (EQE) response, and capacitance-voltage (C-V) as a function of frequency under dark and illuminated conditions at room temperature. The use of 50 pairs of In 0.7 Ga 0.3 As (QD)/GaAs (Barrier) QD structure produced an impressive 35% enhancement in EQE at wavelengths of 900-930 nm. This resulted in a short-circuit current density of 15.43 mA/cm 2 , an open-circuit voltage of 2.54 V, a fill factor of 84.7%, and a η of 33.5%. The 3-J cell with the proposed layers of QDs also demonstrated a 1.0% absolute gain in efficiency compared with a reference cell without QDs. Our XRD, PL, and C-V results revealed that highly stacked InGaAs/GaAs QD layers of high quality can be grown with very little degradation in crystal quality and without the need for strain compensation techniques.

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Application of junction capacitance measurements to the characterization of solar cells

Cited by 42 publications

References 25 publications

Single contact electron beam induced current technique for solar cell characterization

Single contact electron beam induced current technique for solar cell characterization

Nanoimprint lithography for solar cell texturisation

Optical and electrical characteristics of high‐efficiency InGaP/InGaAs/Ge triple‐junction solar cell incorporated with InGaAs/GaAs QD layers in the middle cell

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