Application of LTPL Investigation Methods to CVD‐Grown SiC

Camassel, Jean; Juillaguet, Sandrine; Zieliński, Marcin; Balloud, Carole

doi:10.1002/cvde.200606472

Cited by 40 publications

(54 citation statements)

References 28 publications

(30 reference statements)

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“…The detection limit (DL) of the setup depended on the impurity. It was ~10 14 cm -3 for Al but only ~ 10 16 to 10 17 cm -3 for N [7]. The structural quality of the grown material at large scale was studied by using the omega angle (rocking scans) X-Ray Diffraction (XRD) measurements on the Si-face of the samples by using the (111) Bragg reflection.…”

Section: Methodsmentioning

confidence: 99%

“…From the LTPL it was also possible to extract the level of n-type doping using the FHWM of the TAphonon replica of the ZPL (zero-phonon line) of the nitrogen bound exciton [28], combined with the calibration curve of Ref: [7]. For the Al doping, a combination of Al bound exciton line intensities with the intensity of the N-Al donor-acceptor pair intensities were used.…”

Section: Photoluminescence Studymentioning

confidence: 99%

See 1 more Smart Citation

Effect of initial substrate conditions on growth of cubic silicon carbide

Vasiliauskas

Marinova

Syväjärvi

et al. 2011

Journal of Crystal Growth

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Abstract. In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H-SiC substrates preparations were used: (i) as-received, (ii) repolished, (iii) annealed and covered by silicon layer, (iv) with (111) 3C-SiC buffer layer. Almost 100% coverage and low twin density was achieved when growing on the buffer layer. The XRD and TEM characterizations show better material quality when layer is grown directly on 6H-SiC substrates.Background doping evaluated by LTPL is in the range of 10 16 cm -3 for N and 10 15 cm -3 for Al in all grown layers.

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Section: Methodsmentioning

confidence: 99%

Section: Photoluminescence Studymentioning

confidence: 99%

Effect of initial substrate conditions on growth of cubic silicon carbide

Vasiliauskas

Marinova

Syväjärvi

et al. 2011

Journal of Crystal Growth

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“…Nitrogen concentration of 6-8×10 15 cm -3 was estimated in all samples using the FWHM of the TA-phonon replica. 28 Moreover, we have observed that the biaxial stress, which can be estimated using the ILA/ITO intensity ratio, 29 varies along the step-flow direction in each sample as presented in the inset table in Figure 9. The ILA/ITO ratio shows a clear dependence of biaxial stress on the thickness of the 3C-SiC and approaches a value of one (which reflects that biaxial stress more or less vanishes) when the thickness of the 3C-SiC layer is about 1.2 mm.…”

Section: Geometrically Controlled Lateral Enlargementmentioning

confidence: 95%

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2015

Crystal Growth & Design

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We investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the twostep growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements. ABSTRACTWe investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we 3 demonstrated that the two-step growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements.

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“…The n-type doping concentration was acquired by comparing the full width at half maximum (FWHM) of the TA-phonon replica of the ZPL (zero-phonon line) of the nitrogen bound exciton [20] with the calibration curve from [21]. The Al doping was calculated using a combination of Al bound exciton line intensities with the intensity of the N-Al donor-acceptor pair, if present [10].…”

Section: Photoluminescence Characterizationmentioning

confidence: 99%

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Vasiliauskas¹,

Juillaguet²,

Syväjärvi³

et al. 2012

Journal of Crystal Growth

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Abstract. Nucleation and subsequent growth of cubic SiC (111) on Si-and C-faces of nominally on-axis 6H-SiC substrates was investigated. More uniform nuclei and twin boundary distribution was observed when 3C-SiC was grown on the C-face. This was attributed to a lower critical supersaturation ratio. A new type of defects which appear as pits in the C-face 3C-SiC layers related to homoepitaxial 6H-SiC spiral growth was found and described. The evaluation of the growth driving force for both polar faces showed that the homoepitaxial 6H-SiC spirals were not overgrown on the C-face due to low maximum supersaturation ratio. The XRD ω-rocking characterization shows a better structural quality of the 3C-SiC was grown on the Si-face, however on the C-face the uniformity over the whole sample was higher. Unintentional doping by N (~10 16 cm -3 ) was slightly higher on the C-face while Al doping was higher (~10 14 cm -3 ) on the Si-face of the grown material, similarly to the doping of hexagonal SiC polytypes.

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Application of LTPL Investigation Methods to CVD‐Grown SiC

Cited by 40 publications

References 28 publications

Effect of initial substrate conditions on growth of cubic silicon carbide

Effect of initial substrate conditions on growth of cubic silicon carbide

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

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