Application of microsize light‐emitting diode structure for monolithic optoelectronic integrated circuits

Abstract

A Si/III–V–N alloys/Si structure was grown on a Si substrate by solid‐source molecular beam epitaxy (SSMBE) with an rf plasma nitrogen source and electron‐beam (EB) evaporator. A two‐dimensional (2D) growth mode was maintained during the growth of all layers. High‐resolution X‐ray diffraction (HRXRD) revealed that the structure had a small lattice mismatch to the Si substrate. InGaPN/GaPN double‐heterostructure (DH) light‐emitting diodes (LEDs) were fabricated on Si/III–V–N alloys/Si structure. The various sized LEDs were fabricated to put into the MOSFET for monolithic optoelectronic integrated circuits (OEIC). The luminescence properties of LEDs were evaluated by electroluminescence (EL). A double emission peak from all LED samples was observed at about 642 nm and 695 nm at room temperature (RT). As injection current increased, the emission peak wavelength changed from the peak wavelength of the InGaPN layer to that of the GaPN layer, likely due to carrier overflow of the active layer. A simplified fabrication process for the microsize LED of the unit circuit was proposed. The LEDs with emission areas from 5 × 5 μm2 to 20 × 20 μm2 were fabricated. The LED with an emission area of 5 × 5 μm2 can be applied to an optical device of a monolithic OEIC. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III–V–N/Si Heterostructure

“…The LEDs with dimensions 100 Â 100 m 2 were driven by 16 parallel p-MOSFETs with a 7-m gate length and 50-m gate width. Single-layered Al wiring was used to simplify the fabrication process, and the layout could be made even more compact by using microsize LEDs 20) and multilayered wiring. Figure 3(c) shows the timing chart of V in and V out at an operating frequency of 1 kHz.…”

GaN-LED grown on Si substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device

“…The integration of the light source and Si optical components is promising for future optical MEMS. In the integration of Si device and light source, monolithic and bonding technologies have been investigated [1,2]. Recently for GaN-based crystal growth on Si substrate, good crystals were reported [3,4].…”

Прецизионное химическое травление эпитаксиальных слоев GaP(NAs) для формирования монолитных оптоэлектронных приборов

“…Также активно ведутся разработки светоизлучающих приборов на основе разбавленных нитридов фосфида галлия [7]. В 2007 году группа Технологического университета Toyohashi сообщила о реализации монолитно-интегрированного светоизлучающего диода и кремниевого транзистора [8].…”