Application of Monte Carlo Simulation to a Structural Analysis for Two-Layered/Substrate System

The phase transitions of Ge2Sb2Te5 (GST) films after bombardment with 40keV N2+ ions were investigated. Comparing the nitrogen incorporated GST films with a pure GST film, the suppression of a crystalline grain growth was more effective in the N2+ implanted GST film than in a nitrogen codeposited GST film, i.e., x-ray diffraction data showed that the intensities of the crystalline diffraction peaks were decreased and the full widths at half maximum were broader than that of a pure GST film. This suppression of crystallization owing to the incorporation of nitrogen drastically reduced the roughness of surface morphology and decreased the electrical conductivity of the crystalline film. A near edge x-ray absorption fine structure experiment and x-ray photoemission spectroscopy data demonstrated that the suppression of crystalline grain growth is due to the formation of Ge3N4 and interstitial N2 molecules. In N2+ implanted GST films, in particular, interstitial N2 molecules played a major role in the suppression of crystallization.

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Enhancement of Data Transfer Rate of Phase Change Optical Disk by Doping Nitrogen in Ge–In–Sb–Te Recording Layer

Yeh

Hsieh

Shieh

2004

Jpn. J. Appl. Phys.

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This work investigated the enhancement of the data transfer rate and/or recrystallization speed of Ge–In–Sb–Te recording material by nitrogen doping. The effects of nitrogen content on the dynamic properties of optical disks and the corresponding microstructural changes of the recording layer were studied. The experimental results showed that nitrogen doping at a sputtering gas flow ratio of N2/Ar = 3% might enhance the data transfer rate of an optical disk up to 1.6 times without severely damaging the signal jitter values. However, the disks failed the dynamic tests when too much nitrogen (N2/Ar ≥ 5%) was introduced. Dynamic testing also revealed that nitrogen doping slightly increased the noise level and jitter of the disks. Transmission electron microscopy (TEM) found that nitrogen doping promoted a phase transformation by generating numerous nucleation sites uniformly distributed in the recording layer and hence increased recrystallization speed.

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Application of Monte Carlo Simulation to a Structural Analysis for Two-Layered/Substrate System

Cited by 3 publications

References 27 publications

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Effects of N2+ ion implantation on phase transition in Ge2Sb2Te5 films

Enhancement of Data Transfer Rate of Phase Change Optical Disk by Doping Nitrogen in Ge–In–Sb–Te Recording Layer

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