Application of P-I-N Diodes and Mosfets for Dosimetry in Gamma and Neutron Radiation Fields

Rosenfeld, Anatoly B.; Kaplan, G.; Carolan, Martin G; Allen, Barry J.; Anokhin, Igor E.; Zinets, O. S.; Khivrich, V.I.; Litovchenko, P.G.

doi:10.1093/oxfordjournals.rpd.a032753

Cited by 15 publications

(8 citation statements)

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“…Although pin diodes are not of the same construction their response presented lower than that of the MOSFETs studied in this work (40 kΩ.cm, 5 V/Gy especially for thermal neutrons) [14].…”

Section: Resultscontrasting

confidence: 61%

High sensitive depleted MOSFET-based neutron dosimetry

Fragopoulou¹,

Konstantakos²,

Zamani³

et al. 2019

hnps

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A new dosemeter based on a depleted Metal-Oxide-Semiconductor field effect transistor, sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse France. In order to be used for neutron dosimetry a thin film of lithium fluoride was deposited on the surface of the gate of the device. The characteristics of the dosemeter such as its response to neutron dose were investigated. The response in thermal neutrons was found to be high. In fast neutrons the response was lower than that of thermal neutrons but higher than the one presented in literature.

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Section: Resultscontrasting

confidence: 61%

High sensitive depleted MOSFET-based neutron dosimetry

Fragopoulou¹,

Konstantakos²,

Zamani³

et al. 2019

hnps

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“…Diodes are found to be the dosimeters of choice due to their advantages such as real-time measurement, good reproducibility, high sensitivity, good spatial resolution, no bias requirement, simple instrumentation, robustness and air pressure independent response. Apart from its use as in in vivo dosimeter and in conventional radiotherapy, diode detector also has application as personal dosimeter (9-10) and neutron dosimeter (11)(12)(13).…”

Section: Technology In Cancer Research and Treatment Volume 13 Numbermentioning

confidence: 99%

Dosimetric Characteristics of a PIN Diode for Radiotherapy Application

Kumar

Sharma

Philomina

et al. 2014

Technol Cancer Res Treat

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The PIN diode developed by Bhabha Atomic Research Centre (BARC) was modified for its use as a dosimeter in radiation therapy. For this purpose the diode was mounted on a printed circuit board (PCB) and provided with necessary connections so that its response against irradiation can be recorded by a standard radiotherapy electrometer. The dosimetric characteristics of the diode were studied in Co-60 gamma rays as well as high energy X-rays. The measured sensitivity of this PIN diode is 4 nC/cGy which is about ten times higher than some commercial diode dosimeters. The leakage current from the diode is 0.04 nA. The response of the PIN diode is linear in the range of 20-1000 cGy which covers the full range of radiation dose encountered in radiotherapy treatments. The non-linearity of the diode response is 3.5% at 20 cGy and it is less than 1.5% at higher dose values. Its repeatability is within 0.5%.The angular response variation is about 5.6% within 6608 with respect to normal beam incidence. The response of the PIN diode at 6 and 18 MV X-rays varies within 2% with respect to its response at Co-60 gamma rays. The source to surface distance (SSD) dependence of the PIN diode was studied for Co-60 beam. It was found that the response of the diode decreases almost linearly relative to given dose for beams with constant collimator setting but increasing SSD (decreasing dose-rate). Within this study the diode response varied by about 2.5% between the maximum and minimum SSD. The dose-rate dependence of the PIN diode for 6 and 15 MV-rays was studied. The variation in response of diode for both energies in the studied dose range is less than 1%. The field size dependence of the PIN diode response is within 1% with respect to the response of ionisation chamber. These studies indicate that the characteristics of the PIN diode are suitable for use in radiotherapy dosimetry.

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“…Fast, massive particles, such as fast neutrons introduce a spectrum of defects that range from point defects to large clusters of displaced atoms. Neutron-induced defects are three orders of magnitude more effective in the degradation of the forward I-V characteristics of the diode than photon-induced defects under the condition of equal incident absorbed ionizing doses [8][9][10][11][12].…”

Section: Mosfet Sensormentioning

confidence: 99%

Semiconductor High-Level Dosimeters Used in the SLAC Mixed Gamma and Neutron Fields

Mao¹

2003

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As part of an exploration of Semiconductor High-Level Dosimetry (SHLD) in the accelerator radiation fields, the response of SHLD system, composed of dual MOSFETs, wide-base PIN diode, and a microprocessor-controlled reader, was calibrated in photon (Co-60) and neutron (Bare-reactor) fields. The response curves for the MOSFET and the PIN diode were determined. The neutron sensitivity of the PIN diode is about a factor of 2200 times higher than its photon sensitivity. Therefore, the PIN diode can be used to measure the neutron dose and virtually ignore the photon dose contribution. The MOSFET can be used to estimate the photon dose after subtracting the ionizing effect of the neutrons. The SHLD was used in the SLAC mixed field to measure the photon and neutron doses around a copper beam dump. The photon measurements near the copper dump agreed reasonably with the FLUKA Monte Carlo calculations. The neutron measurements agreed with FLUKA calculations to within a factor of two.

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Application of P-I-N Diodes and Mosfets for Dosimetry in Gamma and Neutron Radiation Fields

Cited by 15 publications

References 0 publications

High sensitive depleted MOSFET-based neutron dosimetry

High sensitive depleted MOSFET-based neutron dosimetry

Dosimetric Characteristics of a PIN Diode for Radiotherapy Application

Semiconductor High-Level Dosimeters Used in the SLAC Mixed Gamma and Neutron Fields

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