Application of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection

Chiu, Shao-Yu; Wang, Ying-Lang; Chang, Shih-Chieh; Feng, M. S.

doi:10.1016/j.tsf.2004.11.187

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…At present, theoretical and experimental study of plasma properties and plasma technologies is relevant due to significance for such practical applications as thermonuclear fusion [12][13][14][15], plasma medicine [16][17][18], the application of plasma technologies for surface treatment of materials [8][9][10], etc. In particular, the study of the optical properties of plasmas is important as gas discharge is now widely used in lighting devices of various types [19,20].…”

Section: Introductionmentioning

confidence: 99%

Plasma with carbon nanoparticles: advances and application

et al. 2021

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This article is devoted to the study of the glow intensity of radio-frequency capacitive discharge plasma with nanoparticles for further use in lighting devices. The process of carbon nanoparticles synthesis in the radiofrequency discharge was investigated, and the influence of plasma parameters on the formation and growth of the material was also studied. A method for determining the diameter of nanoparticles based on self-bias voltage and electron density is considered. It is revealed that the diameter of nanoparticles has a considerable influence on the optical properties of the plasma, in particular, on the emission intensity. Based on the obtained data, laboratory samples of lighting devices with improved luminous intensities were developed.

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Section: Introductionmentioning

confidence: 99%

Plasma with carbon nanoparticles: advances and application

et al. 2021

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“…In order to replace toxic cyanide copper plating, many non-cyanide copper plating processes are developed in recent years, such as bright acid copper plating with good smoothness and ductility, pyrophosphate copper plating with stable electrolyte, HEDP copper plating with direct work on steel substrate, triethanolamine copper plating with nice dispersive ability, ethylenediamine copper plating with wonderful deep plating ability, citric acid copper plating with good deep and dispersive plating ability and so on [1][2][3]. Cyanide free copper plating technology has made great progress but with some defect, which is that the uniformity and adhesion strength is difficult to meet the requirements with direct plating on steel substrate [4][5][6]. There are three main reasons to lead these shortcomings [7,8].…”

Section: Introductionmentioning

confidence: 99%

Study of Copper Electroplating Films Made by Four Power Modes and Magnetic Field on 20# Steel

Zhao

Wang³

et al. 2014

AMM

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Copper electroplating films were prepared on 20# steel by four different power modes which are direct current plating, single polar pulse plating, bipolar pulse plating and bipolar pulse plating with magnetic field. The electrochemical performance was investigated in 3.5% NaCl solution by means of potentiodynamic polarization measurement. The morphology and micro structure were characterized by scanning electron microscope and X-ray diffraction. It is proved that the magnetic field is responsible for the improvement of the performance of copper electroplating films.

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“…1-3 Copper ͑Cu͒ was adopted for the metallization interconnects in ultralarge-scale-integration structures for semiconductor manufacturers due to its lower resistivity and better resistance to electromigration ͑EM͒. [4][5][6] Low-k ͑black diamond͒ materials have been used as an intermetal dielectric ͑IMD͒ to reduce the dielectric constant ͑k͒. Therefore, integration of Cu/low-k dielectrics is necessary for the back-end-of-line ͑BEOL͒ process in order to reduce both the RC delay and decrease parasitic capacitance of the interconnections.…”

Section: Introductionmentioning

confidence: 99%

Yield improvement of 0.13μm Cu/low-k dual-damascene interconnection by organic cleaning process

Kim

Lee

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Cu/low-k dielectrics are required to reduce resistance-capacitance (RC) delay and parasitic capacitance at the back-end-of-line (BEOL) interconnection. Integration of Cu/low-k dielectrics (black diamond) for BEOL interconnection in 0.13μm technology has gained wide acceptance in the microelectronics industry in recent years. In this article, the authors discuss the process-integration issues of 0.13μm Cu/low-k dual-damascene integration for static random access memory (SRAM) device yield. The same scheme of 0.13μm Cu/fluorinated silicate glass–based device was used for the full process of making a low-k based device. Black diamond was used as a low-k material with a dielectric constant of 2.95. To reduce the damage of low-k and improve the yield of a low-k based device, H2O ashing, organic cleaning, and reduced down pressure in chemical-mechanical planarization were selected for the study. Specifically, the cleaning process after the ashing process was very effective for the removal of organic residues from via, trench, and surface contaminants. There was an increase of 40.79% in SRAM device yield compared to the low-k based device without the organic cleaning chemical process. As a result, the authors successfully integrated a 0.13μm Cu/low-k dual-damascene interconnection with excellent yield performance after the improving process of organic cleaning.

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Application of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection

Cited by 7 publications

References 17 publications

Plasma with carbon nanoparticles: advances and application

Plasma with carbon nanoparticles: advances and application

Study of Copper Electroplating Films Made by Four Power Modes and Magnetic Field on 20# Steel

Yield improvement of 0.13μm Cu/low-k dual-damascene interconnection by organic cleaning process

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