Application of semiconductor detectors in crystal structure investigations

Chwaszczewska, J.; Szarras, S.; Szmid, Z.; Szymczak, M.

doi:10.1002/pssa.2210040305

Cited by 10 publications

(3 citation statements)

References 2 publications

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Section: Discussionmentioning

confidence: 99%

“…The use of a Soller-slit system has another advantage. Namely it prevents the peak shift due to the large-angle divergence (Chwaszczewska, Szarras, Szmid & Szymczak, 1971) from occurring in peaks with high indices.Moreover, there is a possibility of improving the measured d values by making corrections for various aberrations considered by Wilson (1973). If these corrections are properly made in addition to the careful calibrations described above, then the precision of measured d values may probably easily reach 0.01%.…”

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The precision of interplanar distances measured by an energy-dispersive diffractometer

Fukamachi¹,

Hosoya²,

Terasaki³

1973

J Appl Cryst

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According to the papers so far published about diffractometers with energy-dispersive detectors, the precision of a measured lattice spacing has been estimated to be about 0"05 % at best. In the present paper, it is shown that a precision of about 0.01% is attainable without much difficulty by the use of a suitable Soller-slit system and a suitable scattering angle. This was demonstrated on an A1 powder sample. It has been concluded that the limitation of precision is in the electronics rather than in the detector, when the necessary conditions are realized in the present improved system. IntroductionSince the work by Giessen & Gordon (1968) was published, energy-dispersive diffractometers with white Xradiations and solid-state detectors (SSD) have been described by several workers from various points of view. The energy-dispersive diffractometer was correlated with a conventional angle-dispersive diffractometer in a compact form described by Cole (1970). As far as the measurement of interplanar distances is concerned, Giessen & Gordon (1968) rightly suggested that the peak position can be determined with a resolution of about 7x of the energy resolution of the SSD and concluded that the d values can be measured with a precision of about 0.1%. In a recent paper by Lauriat & P6rio (1972), the attainable precision was estimated to be a few percent. In more recent papers, Laine, * Permanent address: Department of Physics, Tohoku University, Sendai, Japan. For Si(Li), F=0.13, AE, mp=80 eV and e=3.92 eV. These data were taken from ORTEC Technical Data, 8000 Series Ge(Li) Low-energy photon spectrometer, and 7000 Series Si(Li) X-ray detectors. The each broken line expresses the case when Z1Eamp = 0. L~ihteenm~iki & Kantola (1972) estimated this value to be about 0.05 % after taking the average of observed lines. It is pointed out in the present paper that a use of a Soller-slit system enables us to improve the precision to the value of 0.01% without appreciably decreasing intensity. Thus it is possible to have a setup in which the limitation is not in the energy resolution of the solid-state detector (SSD) but in the linearity of a spectroscopic amplifier and of an analogue-digital converter. General considerationsIt is necessary to consider two values: the energy resolution AEFwnM of the SSD and the value AEo of the energy broadening of each Bragg reflexion. One of these becomes bigger depending upon the experimental conditions. As is well known (Aitken, 1968), the value AEFwHM is expressed by AEFwnM=[AEZamp+{2.355(FeE)where AEamp is due to the dark current through the SSD and to the noise in a field-effect transistor and a preamplifier, F is the Fano factor, e is the energy required for creating an electron/positive-hole pair, and E is the energy of incident X-ray photons. Fig. 1 shows AEFwHM values for typical detectors commercially available. The Bragg condition is expressed aswhere 20 is the scattering angle, EB (in keV) is the energy of the X-ray photons at each relevant Bragg reflexion, and d (in A) is the int...

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

The precision of interplanar distances measured by an energy-dispersive diffractometer

Fukamachi¹,

Hosoya²,

Terasaki³

1973

J Appl Cryst

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“…Since energy-dispersive X-ray diffraction was introduced (Giessen & Gordon, 1968;Buras, Chwaszczewska, Szarras & Szmid, 1968), it has been applied to various problems. The method can be used for powder measurements (Chwaszczewska, Szarras, Szmid & Szymczak, 1971;Szpumar, Ojanen & Laine, 1974) and for single-crystal investigations (Buras, 1971;Fukamachi, Togawa & Hosoya, 1973;Skelton, Radoff, Bolsaitis & Verbalis, 1972;Buras, Olsen, Gerward, Selsmark & Lindegaard-Andersen, 1975;Skelton, 1976;Sakamaki, Hosoya & Inkamaki, 1980). As the details of the method have been extensively reported (Olsen, Buras, Jensen, Alstrup, Gerward & Selsmark, 1978;Buras, Nimura & Olsen, 1978;Skelton, 1976), we describe in this paper only the advantages with regard to its application to the Debye-Waller-factor (DWF) measurements of D in Ta single crystals (cx phase), i.e.…”

Section: Introductionmentioning

confidence: 99%

Application of the Energy-Dispersive X-ray diffraction method to determine static and dynamic displacements close to D in Ta single crystals

Steyrer¹,

Metzger²,

Peisl³

1984

J Appl Cryst

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The energy-dispersive X-ray diffraction method has been used to measure integrated Bragg intensities from TaDx single crystals as a function of D concentration and scattering vector. The observed attenuation can be described in terms of a thermal and a static Debye-Waller factor (DWF). From the static DWF, for small scattering vectors, the displacements ut = 0"095 (5) A of the four Ta atoms closest to the D atom are obtained and, for large scattering vectors, the change of the mean-square thermal displacement of these atoms Av2= -[5-5 (3)] x 10 -4 A 2.

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Röntgendiffraktometrie

Klimanek¹

1979

Handbuch Festkörperanalyse Mit Elektronen, Ionen Und Röntgenstrahlen

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Application of semiconductor detectors in crystal structure investigations

Cited by 10 publications

References 2 publications

The precision of interplanar distances measured by an energy-dispersive diffractometer

The precision of interplanar distances measured by an energy-dispersive diffractometer

Application of the Energy-Dispersive X-ray diffraction method to determine static and dynamic displacements close to D in Ta single crystals

Röntgendiffraktometrie

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