Application of Silicon Nitride for Solar Cells

Krimmel, Eberhard F.; Hezel, Rudolf; Nohl, Uwe; Bohrer, Rainer

doi:10.1007/978-3-662-09901-8_32

Cited by 6 publications

(7 citation statements)

References 56 publications

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“…These could be assigned by HRTEM investigations (see Fig. 5b) to crystalline silicon (1) and silicon nitride (2). These findings verify excellent the NRRA and FTIR results.…”

Section: Resultssupporting

confidence: 79%

“…Its chemical durability, low density, great hardness and high mechanical strength at high temperatures make it uniquely applicable to extreme conditions [1]. In electronic applications silicon nitride is used in form of thin insulating, masking or passivating layers [2]. Various methods of preparation of silicon nitride have been investigated and are used until now.…”

Section: Introductionmentioning

confidence: 99%

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Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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A thin Si3N4 surface layer is formed by implantation of 60 keV 15N nitrogen ions into single‐crystalline silicon 〈100〉 with a fluence of 5.6 × 1017 ions/cm2 and subsequent annealing (1295 °C, 15 min) under high vacuum conditions. The 15N depth distribution is measured with the resonant nuclear reaction 15N(p, αγ)12C. The formation of Si‐N bonds is proven by Fourier transform infrared spectroscopy using samples implanted with 14N ions and 15N ions, respectively. The crystallinity of the Si3N4 surface layer is studied by X‐ray diffraction and transmission electron microscopy. The annealing process leads to the formation of a polycrystalline α‐Si3N4 surface layer with a thickness of 90 nm. The analysis of high resolution TEM micrographs shows that the layer is split into two sublayers both consisting of single α‐Si3N4 crystals with lateral extension up to 500 nm.

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“…These could be assigned by HRTEM investigations (see Fig. 5b) to crystalline silicon (1) and silicon nitride (2). These findings verify excellent the NRRA and FTIR results.…”

Section: Resultssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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show abstract

“…Si

material is widely used in the fabrication of microelectronic circuits, as a support material for developing the devices with other compounds, with whom it exhibits tight electronic, structural and chemical interrelations [ 14 ]. For photonics, Stulius and Streifer reported in 1977 [ 15 ] the first fabrication of Si

films on a SiO

buffer on Silicon wafers, for light propagation in the red visible wavelength (632 nm).…”

Section: Silicon Nitride Photonic Integration Platforms: State Of mentioning

confidence: 99%

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

Muñoz

Micó

Bru

et al. 2017

Sensors

241

156

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Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform.

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“…At negative voltages the current of autoelectron emission flowing from the ME surface through a tunnel-transparent gap to the surface states of the ferroelectric film may occur, giving rise to field screening in the nano-gap by charge accumulation on this surface. Such a process was previously observed experimentally in the study of the memory effect in structures based on thin films of silicon nitride with a sublayer of a tunnel-transparent layer of silicon dioxide [18]. When electrostatic micromotors have been investigated (see [19]), this effect manifested itself in charge accumulation at the gap-ferroelectric interface even when sufficiently small (less than 50 V) negative voltages were applied to the moving electrode of the MFGM structure.…”

Section: Resultsmentioning

confidence: 65%

Nanometer Gap in Electromechanical Converters—A Way to Achieve an Extremely High Energy Density

Baginsky

Kostsov

2019

Micromachines

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The analysis of electromechanical energy converters based on metal-thin film ferroelectric (with a large specific capacitance)-nanogap-moving electrode structures was performed. It was shown that the density of the energy being converted and its absolute value increase with the decreasing gap value between the surfaces of the ferroelectric and the metallic moving electrode up to nanometer values. The effects limiting the growth of this energy were established, and the limiting value of the energy density transformed in the nanogap of these structures was determined to be about 1.6 × 1010 J/m3, which is 4 orders of magnitude higher than the energy density in inductive converters. The experimental verification of this model based on the data for micromotors fabricated on these structures is given.

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Application of Silicon Nitride for Solar Cells

Cited by 6 publications

References 56 publications

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

Nanometer Gap in Electromechanical Converters—A Way to Achieve an Extremely High Energy Density

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