Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

Nguyen, Manh-Cuong; Nguyen, An Hoang Thuy; Ji, Hyung-Min; Cheon, Jonggyu; Kim, Jin-Hyun; Yu, Kun-Ming; Cho, Seong‐Yong; Kim, Sang Woo; Choi, Rino

doi:10.1109/ted.2018.2859224

Cited by 18 publications

(7 citation statements)

References 31 publications

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“…[37] Using the charge pumping technique as well, the IGZO/SiO 2 interface has a trap density of 6 × 10 10 cm −2 , while the interface state density spans a wide range from 10 9 to 10 14 eV −1 cm −2 . [25] Compared to previous results, the PMMA/DPPT-TT interface states are relatively numerous (Table I), but they can exhibit higher performance than other previous classes of polymer transistors. This may be caused by the following features:…”

contrasting

confidence: 59%

“…The trap density and interfacial state distribution for various interfaces are summarized in Table I. Various techniques, including charge pumping, [25], [38] Berglund analysis, [35] optically assisted high-frequency CV characterization, [36] conductivity, [37] and Kelvin probes, [40] were utilized to investigate the interfacial states. According to Table I, the trap density of DPPT-TT/PMMA is 6 × 10 12 eV −1 cm −2 , which is greater than that of other organic and inorganic semiconductors.…”

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confidence: 99%

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Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors

Ding

Zhu

Yang

et al. 2023

IEEE J. Electron Devices Soc.

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Donor-Acceptor (D-A) polymer field-effect transistors (pFETs) are at the cutting edge of organic electronics. However, some fundamental cognition of interface states remains unquantified, particularly at different dynamic scales. In this study, the interface states of D-A polymer transistors are quantified using the dynamic pumping method. The experimental results indicate that the interface state density of the transistor is insensitive to the measurement pulse condition and stays within the range of 10 12 ∼ 10 13 cm -2 . The experiments described in this paper provide a quantitative analysis of interface states. This analysis can serve as effective guidance for optimizing future devices.

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confidence: 59%

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confidence: 99%

Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors

Ding

Zhu

Yang

et al. 2023

IEEE J. Electron Devices Soc.

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“…Indium oxide (In 2 O 3 ) films have high electron mobility, high carrier density, and excellent optical transmittance compared with other oxide semiconductors [17,18], making them an ideal material for transparent thin film transistors [19]. In order to obtain high-quality In 2 O 3 films, other elements are added, such as InSnO (ISO) [20][21][22], InZnSnO (IZTO) [23][24][25][26], InGaZnO (IGZO) [27][28][29][30], etc.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Zhang

Zhou

et al. 2019

Coatings

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Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indium oxide (InxZryO) thin films were prepared by the solution method, with indium oxide being doped with zirconium in order to tune the relative number of oxygen vacancies. The influence of the Zr doping concentration and the post-annealed temperature on the properties of the InxZryO thin films was investigated. The results show that the doping process improves the crystallinity and relative density of the obtained films. A novel nondestructive method named microwave photoconductivity decay (μ-PCD) was used to evaluate the quality of InxZryO thin films by simply measuring their response under laser irradiation. The relative number of oxygen vacancies and the minority carrier concentration achieved minimum values at 10 at.% Zr doping concentration. Furthermore, InxZryO thin films with optimal properties from an electrical point of view were obtained at 10 at.% Zr doping concentration, annealed at 400 °C. Characterized by an average transmittance above 90% in the visible range, the obtained InxZryO thin films can be used as active layer materials in the fabrication of high-performance thin film transistor (TFT) devices.

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“…Conversely, when the gate voltage decreases from V top to V base , the Fermi level at the interface decreases, leading to electron movement from the gate to the source, but the previously trapped electrons at the interface are left because of its long emission time . Therefore, integrating the obtained current over time allows us to determine the interface trap charges ( Q it ), which can be expressed as following equation: Q normali normalt = prefix∫ t start t stop I r + I f − I noise d t D normali normalt = Q normali normalt q · W · L where I r , I f , I noise , q , W , L , t start , and t stop are current during rising time, current during falling time, noise current, elemental charge, channel width, channel length, start point of the pulse, and stop point of the pulse, respectively. The schematic illustrations of electron capturing and emission behavior during the gate voltage pulse are shown in Figure b,c.…”

Section: Resultsmentioning

confidence: 99%

Interface Traps of Boron Nitride Gated Transition-Metal Dichalcogenide Channel Field-Effect Transistors by Temperature Dependent Pulse Pumping Method

Kim,

Choi,

Kim

et al. 2024

ACS Appl. Electron. Mater.

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Field-effect transistors (FETs) using transitionmetal dichalcogenides (TMDs) as channel materials are being extensively explored for future nanoelectronic applications. The mobility of MoS 2 is significantly short of the theoretically anticipated value, primarily due to constraints imposed by charged impurities and phonon scattering. The interface states associated with charge trapping and detrapping can have a significant impact on mobility, necessitating a more comprehensive investigation and understanding. In this study, we fabricated MoS 2 FET with hexagonal boron nitride (hBN) as a dielectric in a top-gate configuration and single pulse charge pumping (SPCP) method for different temperatures was introduced to evaluate interface trap densities. In pulse measurements, electrons move from the source to the gate during the rising phase and from the gate to source during the falling phase, manifesting as peaks in the current in time domain measurement. The interface trap densities obtained from SPCP revealed variations with temperature, observed to be comparable with those estimated from the subthreshold swing.

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Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

Cited by 18 publications

References 31 publications

Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors

Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Interface Traps of Boron Nitride Gated Transition-Metal Dichalcogenide Channel Field-Effect Transistors by Temperature Dependent Pulse Pumping Method

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