Application of spectroscopic scatterometry method in hole matrices analysis

Quintanilha, R.; Hazart, J.; Thony, Philippe; Henry, Daniel

doi:10.1117/12.599373

Cited by 8 publications

(7 citation statements)

References 1 publication

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“…In OCD targets with non-perpendicular sidewalls, crosscoupling between linewidth and sidewall angle in the optical signature is often a significant source of uncertainty in linewidth measurement. 8 In the current case, this source of uncertainty is not present. The slope between of w OCD vs. w SEM was also found to be very robust to changes in the substrate description.…”

Section: Resultsmentioning

confidence: 78%

Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications

Patrick¹,

Germer²,

Cresswell³

et al. 2007

AIP Conference Proceedings

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We use an optical critical dimension (OCD) technique, matching modeled to measured scatterometry signatures, to obtain critical dimension linewidth of lines in grating targets fabricated on SIMOX (separation by implantation of oxygen) substrates using the single-crystal critical dimension reference materials (SCCDRM) process. We first compare experimentally obtained reflectance signatures for areas of the unpatterned substrate with signatures modeled using Fresnel theory, and show that the buried oxide (BOX) layer of the SIMOX is not well described optically by a single homogeneous layer of SiO 2 , but can be so described if a mixed Si-SiO 2 boundary layer is included between the Si wafer and the BOX layer. We then obtain linewidths from OCD measurements on a series of grating targets with a range of design linewidths and pitches, and show that the linewidth obtained from the OCD technique is linearly related to the linewidth obtained from scanning electron microscopy (SEM), with a slope near unity and zero offset. While these results are very promising, further work in improving the fit of the simulated signatures to the measured signatures for some of the targets, reducing the target line roughness, and analyzing the uncertainties for potential optical critical dimension reference materials, is anticipated.

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Section: Resultsmentioning

confidence: 78%

Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications

Patrick¹,

Germer²,

Cresswell³

et al. 2007

AIP Conference Proceedings

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“…These spectra are deduced from the fÁ; Ég spectra of the ''pellicle on c-Si'' structure using eqs. ( 9) and (10). To test method 2, we measured two samples that are both covered with pellicles.…”

Section: Resultsmentioning

confidence: 99%

Ellipsometry for Pellicle-Covered Surface

Lee¹,

Kyoung²,

Song

et al. 2008

jjap

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The photomask (PM) surface is covered with a pellicle to protect from dust and other airborne particles. However, a defect known as haze appears on the surface of the PM during exposure even with a pellicle cover. As lithography goes into the deeper UV, the photochemical reactions of contaminants become enhanced to form haze on the PM surface. This affects the lithography as haze absorbs or scatters UV. Ellipsometry may be an ideal technique for the early detection of a haze layer. However, when the PM is covered with a pellicle, the ellipsometric data collected from the surface become extremely distorted owing to the non-normal transmission through the pellicle. In this article, we introduce a novel technique so that the conventional ellipsometric data can be obtained without removing the pellicle. If ellipsometry can be used for the inspection of the PM with a pellicle in place, the cleaning frequency of the PM will be reduced significantly.

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“…into the sample holder each day. The resulting reflectance data sets were fit to a library where the parameters t, u, and w REFERENCES were allowed to vary, with step sizes of 0.5 nm, 0.5 nm, and [1] http:Hwwwitrs.net/Links/20051TRS/Metrology205.pdt, p. 8,20 0.2 nm, respectively. Although slight differences could be [2] M.W.…”

Section: Sem CD Measurementsmentioning

confidence: 99%

Study of Test Structures for Use as Reference Materials for Optical Critical Dimension Applications

Allen

Patrick

Bishop³

et al. 2007

2007 IEEE International Conference on Microelectronic Test Structures

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Optical critical dimension (OCD) metrology has Since the edges of features made using the SCCDRM rapidly become an important technology in supporting the process are silicon lattice-planes, the dimensions of any worldwide semiconductor industry. OCD relies on a particular feature can be calibrated by using the known combination of measurement and modeling to extract the spacing of the silicon lattice (0.543 102 122(20) nm).34 In average dimensions of an array of parallel features, having addition, the geometry makes the SCCDRM excellent for use fixed pitch and drawn linwidth. This paper reports results of in atomic force microscopy (AFM) calibration and tip OCD measurements on arrays selected to serve as prototype cr iat iond reference structures. In addition, SEM CD measurements were characterization. made on several of these structures to verify line uniformity.Previous work focused on SCCDRM test structures with These prototypes are fabricated using the single-crystal CD isolated features; calibration ofthese isolated features was for reference materials (SCCDRM) process, which in prior work a single location on a particular feature. has been successfully applied to isolated feature reference OCD applications differ from conventional CD materials. The SCCDRM process provides features with measurements in two critical ways: known geometries, typically vertical sidewalls, defined by the * The CD is determined over a relatively large region: silicon lattice.typically a spot size of 20 ptm to 50 ptm.

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Application of spectroscopic scatterometry method in hole matrices analysis

Cited by 8 publications

References 1 publication

Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications

Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications

Ellipsometry for Pellicle-Covered Surface

Study of Test Structures for Use as Reference Materials for Optical Critical Dimension Applications

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