Application of superlattice gate and modulation-doped buffer for GaAs power MESFET grown by MBE

A working p-type Si metal semiconductor field-effect transistor structure, utilizing a boron delta-doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility of 120 (180) cm2 V−1 s−1 at 300 (77) K has been obtained. The sheet carrier density of the delta layer was estimated to be about 1.8×1012 cm−2. It is shown that the delta field-effect transistor exhibits an extrinsic transconductance of 640 μS/mm for a gate length of 5 μm, and a high gate to drain breakdown voltage (≳18 V). By reducing the gate length to 1 μm, a transconductance of up to 3.2 mS/mm is expected.

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Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy

Carns

Wang

et al. 1993

Applied Physics Letters

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Application of superlattice gate and modulation-doped buffer for GaAs power MESFET grown by MBE

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Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy

Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy

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