Application of Taguchi method to optimize the sol–gel dip-coating process of the semiconductor Cu2ZnSnS4 with good optical properties

Ziti, Ahmed; Hartiti, Bouchaíb; Labrim, H.; Fadili, Salah; Tahri, Mounia; Belafhaili, Amine; Ridah, Abderraouf; Thévenin, Philippe

doi:10.1007/s10971-019-05040-0

Cited by 11 publications

(1 citation statement)

References 45 publications

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“…Figure 3(b) displays a thickness around 1.5 μm of the compact CBTSe films. It is reported that a kesterite absorber with a thickness of ∼1.5 μm shows the best properties [45].…”

Section: Resultsmentioning

confidence: 99%

Fully stoichiometric Cu₂BaSn(S_1−xSe _x )₄ solar cells via chemical solution deposition

Wang¹,

Yi²,

Zhang³

et al. 2020

Nanotechnology

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Cu2BaSn(S1−xSex)4 has shown great prospects in the photoelectric field due to Earth-abundance, low toxicity, cost efficiency, direct bandgap, high absorption coefficient (>104 cm−1) and reduced anti-site disorder relative to Cu2ZnSn(S1−xSex)4. A fully-tunable ratio of S/Se is the key to broaden the bandgap of Cu2BaSn(S1−xSex)4. Here, we introduce a thionothiolic acid metathesis process to readily tune the stoichiometry of Cu2BaSn(S1−xSex)4 films for the first time. Different stoichiometric Se/(S + Se) of Cu2BaSn(S1−xSex)4 from zero to one can vary the bandgap range from 2 to 1.68 eV. The grain size of Cu2BaSn(S1−xSex)4 films can be grown more than 10 μm. The optimized bandgap and high-quality growth of Cu2BaSn(S1−xSex)4 films ensure the best power conversion efficiency of 2.01% for solution-processed Cu2BaSn(S1−xSex)4 solar cells. This method provides an alternative solution-processed way for the synthesis of fully stoichiometric Cu2BaSn(S1−xSex)4.

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“…Figure 3(b) displays a thickness around 1.5 μm of the compact CBTSe films. It is reported that a kesterite absorber with a thickness of ∼1.5 μm shows the best properties [45].…”

Section: Resultsmentioning

confidence: 99%

Fully stoichiometric Cu₂BaSn(S_1−xSe _x )₄ solar cells via chemical solution deposition

Wang¹,

Yi²,

Zhang³

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

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Study and Characterization of ZnO Thin Films Deposited by Sol–Gel Method Associated With Dip Coating

Pilor

Hartiti

Dioum

et al. 2022

Sustainable Energy-Water-Environment Nexus in Deserts

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Elaboration and characterization of quaternary material Cu2ZnSnS4 by spray pyrolysis technique using Taguchi method

Salma,

Hartiti,

Ziti

et al. 2023

Appl. Phys. A

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Application of Taguchi method to optimize the sol–gel dip-coating process of the semiconductor Cu2ZnSnS4 with good optical properties

Cited by 11 publications

References 45 publications

Fully stoichiometric Cu₂BaSn(S_1−xSe _x )₄ solar cells via chemical solution deposition

Fully stoichiometric Cu₂BaSn(S_1−xSe _x )₄ solar cells via chemical solution deposition

Study and Characterization of ZnO Thin Films Deposited by Sol–Gel Method Associated With Dip Coating

Elaboration and characterization of quaternary material Cu2ZnSnS4 by spray pyrolysis technique using Taguchi method

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Application of Taguchi method to optimize the sol–gel dip-coating process of the semiconductor Cu2ZnSnS4 with good optical properties

Cited by 11 publications

References 45 publications

Fully stoichiometric Cu2BaSn(S1−x Se x )4 solar cells via chemical solution deposition

Fully stoichiometric Cu2BaSn(S1−x Se x )4 solar cells via chemical solution deposition

Study and Characterization of ZnO Thin Films Deposited by Sol–Gel Method Associated With Dip Coating

Elaboration and characterization of quaternary material Cu2ZnSnS4 by spray pyrolysis technique using Taguchi method

Contact Info

Product

Resources

About

Fully stoichiometric Cu₂BaSn(S_1−xSe _x )₄ solar cells via chemical solution deposition

Fully stoichiometric Cu₂BaSn(S_1−xSe _x )₄ solar cells via chemical solution deposition