2005
DOI: 10.1016/j.apsusc.2005.01.028
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Application of the chemical vapor-etching in polycrystalline silicon solar cells

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Cited by 21 publications
(15 citation statements)
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“…[228][229][230][231][232][233] In CVE a solution similarly to stain etching is made up from concentrated HF plus concentrated HNO 3 . However, instead of dipping the Si substrate in the solution, the substrate is held above the solution.…”
Section: Chemical Vapor Etchingmentioning
confidence: 99%
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“…[228][229][230][231][232][233] In CVE a solution similarly to stain etching is made up from concentrated HF plus concentrated HNO 3 . However, instead of dipping the Si substrate in the solution, the substrate is held above the solution.…”
Section: Chemical Vapor Etchingmentioning
confidence: 99%
“…Infrared spectroscopy reveals a combination of hydrogen termination and oxidation of the surface. 228,230,231 Similarly to stain etching VE has incubation period. Saadoun et al 232 observed that for p-type Si the formation of the PSi layer begins at least 2 or 3 min after exposing the substrate to HNO 3 /HF vapors.…”
Section: Chemical Vapor Etchingmentioning
confidence: 99%
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“…1b). The average crystallite size D of the annealed TiO 2 nanoparticles (NPs) was estimated from XRD patterns using the Debye-Scherrer formulae [12]. The crystallite size was found to increase from 31 to 44 nm as the film thickness increases from 5 to 160 nm.…”
Section: Methodsmentioning
confidence: 99%