“…1−7 However, progress in the context of a low-temperature (cryogenic) range has been unsatisfactory, as the existing TE performance efficiency, which is defined by the dimensionless thermoelectric figure-of-merit, ZT = α 2 σT/κ (where α, σ, T, and κ are, respectively, the Seebeck coefficient, electrical conductivity, absolute temperature, and thermal conductivity) 5,6,8,9 is far below the application requirement. 3,10,11 For futuristic applications such as in aerospace modules, 12 high-end ultrafast computing, 3 self-powered implantable electronic medical aid devices, 13,14 etc., enhancing low-temperature ZT is a "must" as it has the potential to shape the future intelligent life. 12,13 This article also aims to achieve a ZT as high as possible in a wellknown conventional cryogenic TE material.…”