Application of Tunnel Magnetoresistance for PCB Tracks Current Sensing in High-Frequency Power Converters

Cai, Hui; Lin, Weicong; Shao, Shuai; Wu, Xinke; Zhang, Junming

doi:10.1109/tim.2023.3289537

Cited by 3 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Current sensing is required in many power electronic applications for control, power management, overcurrent protection, or monitoring tasks [1,2]. Techniques used in measuring electric current include, mainly: shunt resistors, current transformers, Rogowski coils, Hall effect sensors, and magnetoresistive (MR) sensors [3].…”

Section: Introductionmentioning

confidence: 99%

“…MR sensors, used in this work, vary their resistance depending on the applied magnetic field and, therefore, depending on the current to be measured. Although Hall effect sensors are the most used in power electronics applications, MR sensors offer advantages in terms of sensitivity and compact size [2].…”

Section: Introductionmentioning

confidence: 99%

“…Three different technologies of magnetoresistances have been applied in current sensing: anisotropic magnetoresistance (AMR) [9], giant magnetoresistance (GMR) [10], and tunnel magnetoresistance (TMR) [2,11]. The TMRs are better in terms of temperature stability, power consumption, and size [2].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of Magnetoresistive Shunts and Its Sensitivity Temperature Compensation

Ramírez-Muñoz,

García-Gil,

Cardoso

et al. 2024

Sensors

View full text Add to dashboard Cite

The main purpose of the paper is to show how a magnetoresistive (MR) element can work as a current sensor instead of using a Wheatstone bridge composed by four MR elements, defining the concept of a magnetoresistive shunt (MR-shunt). This concept is reached by considering that once the MR element is biased at a constant current, the voltage drop between its terminals offers information, by the MR effect, of the current to be measured, as happens in a conventional shunt resistor. However, an MR-shunt has the advantage of being a non-dissipative shunt since the current of interest does not circulate through the material, preventing its self-heating. Moreover, it provides galvanic isolation. First, we propose an electronic circuitry enabling the utilization of the available MR sensors integrated into a Wheatstone bridge as sensing elements (MR-shunt). This circuitry allows independent characterization of each of the four elements of the bridge. An independently implemented MR element is also analyzed. Secondly, we propose an electronic conditioning circuit for the MR-shunt, which allows both the bridge-integrated element and the single element to function as current sensors in a similar way to the sensing bridge. Third, the thermal variation in the sensitivity of the MR-shunt, and its temperature coefficient, are obtained. An electronic interface is proposed and analyzed for thermal drift compensation of the MR-shunt current sensitivity. With this hardware compensation, temperature coefficients are experimentally reduced from 0.348%/°C without compensation to −0.008%/°C with compensation for an element integrated in a sensor bridge and from 0.474%/°C to −0.0007%/°C for the single element.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of Magnetoresistive Shunts and Its Sensitivity Temperature Compensation

Ramírez-Muñoz,

García-Gil,

Cardoso

et al. 2024

Sensors

View full text Add to dashboard Cite

show abstract

“…9 Meanwhile, Chen, et al demonstrate the TMR-based noninvasive approach for measuring 0-1 MHz current with 5% amplitude variability. 19 Moreover, magnetoresistive effects may be exploited for qubit reading and manipulation in some quantum computer designs. The integration of this technology is feasible across a range of embedded systems, encompassing microcontrollers, Internet of Things (IoT) devices, and automotive electronics.…”

mentioning

confidence: 99%

Review—Potential of Tunneling Magnetoresistance Coupled to Iron Oxide Nanoparticles as a Novel Transducer for Biosensors-on-Chip

Wibowo,

Kurniawan,

Kusumahastuti

et al. 2024

J. Electrochem. Soc.

View full text Add to dashboard Cite

Biosensors-on-chip (BoC), compact and affordable public diagnostic devices, are vital for preventing health crises caused by viral and bacterial mutations, climate change, and poor diets. Clinical, remote, and field use are possible with these devices. BoC is used in food safety, environmental monitoring, and medical diagnosis. The coupling of tunneling magnetoresistance (TMR) sensing elements in chip form with surface functionalized green synthesized iron oxide nanoparticles (GS-IONPs) as a biomarker, known as TMR/GS-IONPs, allows BoC devices to be made. The functional framework of BoC based on TMR/GS-IONPs, the instrument system, and biomolecule immobilization are covered in this review. This review aims to overview the recent research on a biosensor using TMR technology with IONPs biomarkers and discusses its future advances in point-of-care diagnostics. TMR sensor has revolutionized low-magnetic field sensing technologies, yet biosensing faces challenges. Large magnetization of IONPs to generate sufficient stray-field to disturb its magnetic moment, compact and inexpensive instrumentation to sense the low voltage yielded by the TMR/GS-IONPs system, and high-selectivity bio-analyte immobilization to the surface of IONPs to increase sensor sensitivity are the notable issues. Additionally, improving device performance requires creating high-TMR materials. Despite challenges, research and technological advances hold great promise for TMR/GS-IONP bioapplications.

show abstract

High Interference-Resistant Magnetic Field Probe for Non-Invasive Current Distribution Monitoring in Press Pack IGBTs of HVDC Valves

Lu,

Shen,

Dongye

et al. 2025

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Application of Tunnel Magnetoresistance for PCB Tracks Current Sensing in High-Frequency Power Converters

Cited by 3 publications

References 21 publications

Characterization of Magnetoresistive Shunts and Its Sensitivity Temperature Compensation

Characterization of Magnetoresistive Shunts and Its Sensitivity Temperature Compensation

Review—Potential of Tunneling Magnetoresistance Coupled to Iron Oxide Nanoparticles as a Novel Transducer for Biosensors-on-Chip

High Interference-Resistant Magnetic Field Probe for Non-Invasive Current Distribution Monitoring in Press Pack IGBTs of HVDC Valves

Contact Info

Product

Resources

About