Amorphous Chalcogenide Semiconductors and Related Materials 2011
DOI: 10.1007/978-1-4419-9510-0_7
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Cited by 6 publications
(11 citation statements)
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“…It is well known that chalcogenide materials always contain a high concentration of unsaturated bonds. These dangling bonds cause the formation of intrinsic deep level defects [6,10,11,13,15,58]. The unsaturated bound states or native deep level defects increase the density of localized states near the conduction and valence bands, and consequently decrease the optical band gap.…”
Section: Temperature Dependence Of the Direct Optical Band Gap Energymentioning
confidence: 99%
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“…It is well known that chalcogenide materials always contain a high concentration of unsaturated bonds. These dangling bonds cause the formation of intrinsic deep level defects [6,10,11,13,15,58]. The unsaturated bound states or native deep level defects increase the density of localized states near the conduction and valence bands, and consequently decrease the optical band gap.…”
Section: Temperature Dependence Of the Direct Optical Band Gap Energymentioning
confidence: 99%
“…Numerous experimental studies have shown that to a large extent, the physical properties of chalcogenide semiconductors are determined by lattice imperfections [5][6][7][8][9][10][11][12][13][14]. The most common of which are vacancies in the chalcogenide sublattice [5][6][7][8][9][10][11][12][13][14].…”
Section: E T P Gmentioning
confidence: 99%
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“…They have an increasing number of important applications in electronics and photonics because of their high optical nonlinearity and wide transmission range. [1][2][3][4][5] For example, researchers have used chalcogenide glasses for all-optical processing of high speed telecommunication signals. [6,7] It has been demonstrated that the glass properties can be tuned in a widely compositional range, therefore, it is possible to optimize the glasses for specific applications by tuning the material composition.…”
Section: Introductionmentioning
confidence: 99%