Applications of an atomic force microscope voltage probe with ultrafast time resolution

Nechay, Bettina; Ho, F.; Hou, A. S.; Bloom, D. M.

doi:10.1116/1.587855

Cited by 23 publications

(8 citation statements)

References 4 publications

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“…The HFSEFM technique invented by Bloom and Kubalek [18][19][20][21] has proven to be the most versatile one up to now. The potential distribution of the device under test (DUT) is monitored via the Coulomb force between the biased tip and the DUT in the dynamic mode.…”

Section: Probes For Hfsefmmentioning

confidence: 99%

Novel probes for scanning probe microscopy

Oesterschulze¹

1998

Applied Physics A: Materials Science & Processing

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Cantilever probes for scanning probe microscopy (SPM) applications are fabricated in almost any case from (100) silicon wafers. Although the probes show excellent mechanical properties which make silicon cantilevers appropriate for topography imaging by scanning force microscopy (SFM), modern SPM applications force the search for novel materials with specific material properties which would be of advantage in SPM. In this paper several concepts for SPM probes are described which make use of specific properties of gallium arsenide, diamond and various metals. Different sensor concepts, e.g. in the tip integrated Schottky diode, coplanar waveguide lines integrated on a cantilever probe, etc., are introduced. They are designed for imaging of thermal, electrical, and optical sample surface properties exploiting the unique properties of the above-mentioned materials.Since the invention of scanning force microscopy (SFM) by Binnig et al. in 1986 [1], scanning probe microscopy (SPM) has been demonstrated to be a intriguing tool for highresolution imaging of various physical surface properties [2]. In particular, the cantilever probe concept introduced for SFM has proven to be the most versatile and flexible one available so far. A prerequisite for SFM is the fabrication of probes with reproducible properties, e.g. resonance frequency, force constant, tip shape, and radius of curvature of the tip [3]. Until today the material used for probe fabrication has been almost exclusively (100)-oriented Si (or silicon nitride) because of the well-established micromachining techniques known from semiconductor technology.The most important aspect regarding the potential of SPM is the possibility to integrate various sensors in a single probe. This allows us to image additional physical quantities besides the surface topography. To achieve this aim, novel probe concepts have to be developed and realized by reproducible technological processes. Although the mechanical properties of silicon are quiet excellent with respect to SFM, in modern applications of SPM other probe properties, e.g. electrical, thermal, optical, magnetic, etc., are decisive. For this reason novel materials with specific physical properties have to be considered to optimize probe sensitivity as well as to find new applications.In the first section of the paper it is demonstrated that not only Si, but also GaAs, diamond, and thin metal filmsmaterials with unique physical properties -are appropriate materials. Technological processes will be described which allow batch processing of these materials for probe fabrication. In the second part of the paper the material properties are considered -a significant point for the development of novel active and passive SPM probes.We report on the design and micromachined fabrication of near-field probes for high-frequency scanning electrical force microscopy (HFSEFM), scanning thermal microscopy (SThM), and scanning near-field optical microscopy (SNOM). Probe concepts and fabrication processes presented include the possibilit...

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Section: Probes For Hfsefmmentioning

confidence: 99%

Novel probes for scanning probe microscopy

Oesterschulze¹

1998

Applied Physics A: Materials Science & Processing

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“…Both are referenced to a common ground so that the voltage across the gap is V prob ϪV samp . The measured electrostatic force is then given 204 by…”

Section: High-frequency Electrostatic Force Microscopymentioning

confidence: 99%

“…Later, wave form measurements were performed on a MHz complementary metal-oxide-semiconductor ͑CMOS͒ chip, 206,207 followed by heterodyne scanning at 3.2 GHz on a CPW circuit. 204 Bridges et al [209][210][211][212] started with proof-of-principle experiments for heterodyne detection in the kHz range, 209 demonstrated Mbit digital pattern extraction 210 and later presented vector-voltage circuit probing at 10 GHz. 211 Later a nulling method was developed 209 that allowed for direct measurements over passivated structures.…”

Section: High-frequency Electrostatic Force Microscopymentioning

confidence: 99%

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High-frequency near-field microscopy

Rosner

Weide

2002

Review of Scientific Instruments

219

133

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Conventional optics in the radio frequency ͑rf͒ through far-infrared ͑FIR͒ regime cannot resolve microscopic features since resolution in the far field is limited by wavelength. With the advent of near-field microscopy, rf and FIR microscopy have gained more attention because of their many applications including material characterization and integrated circuit testing. We provide a brief historical review of how near-field microscopy has developed, including a review of visible and infrared near-field microscopy in the context of our main theme, the principles and applications of near-field microscopy using millimeter to micrometer electromagnetic waves. We discuss and compare aspects of the remarkably wide range of different near-field techniques, which range from scattering type to aperture to waveguide structures.

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“…19,[22][23][24][25][26] The force F on the cantilever goes as 19,[22][23][24][25][26] The force F on the cantilever goes as…”

Section: Relation To Previous Workmentioning

confidence: 99%

The nanoscilloscope: Combined topography and AC field probing with a micromachined tip

Weide¹,

Neužil²

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inDevelopment of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuum-scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy Rev.Fabrication of gold nanostructures on a vicinal Si(111) 7×7 surface using ultrahigh vacuum scanning tunneling microscope and a gold-coated tungsten tip Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography J.We introduce a new concept for combined probing of topography and local AC fields, and report preliminary results of tip fabrication and scale-model measurements. The scanning force microscope ͑SFM͒ has been recently used to measure AC fields using the nonlinear response of the cantilever to voltage differences between the sample and scanning tip. By contrast, we extend the concept of near-field scanning optical microscopy ͑NSOM͒ down in frequency by employing a non-cutoff coaxial micromachined waveguide/tip, maintaining the topographic and tip-sample distance control capabilities of the SFM. Because this instrument will be used to measure both AC fields and topography with nanometer-level localization and better than nanosecond temporal resolution, we call it a nanoscilloscope.

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Applications of an atomic force microscope voltage probe with ultrafast time resolution

Cited by 23 publications

References 4 publications

Novel probes for scanning probe microscopy

Novel probes for scanning probe microscopy

High-frequency near-field microscopy

The nanoscilloscope: Combined topography and AC field probing with a micromachined tip

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