Thanks to the unique properties of two-dimensional (2D)
materials
and their van der Waals (vdW) heterostructures, 2D materials technologies
have continued to make big strides. Among various 2D materials semiconductors,
the recently discovered bismuth oxyselenide (Bi2O2Se) is highly attractive because of its high electron mobility, air
stability, as well as its ability to form native high-k oxide. Combined with semi-metallic graphene, the Bi2O2Se/graphene heterostructure has been shown to excel in optoelectronic
and electronic applications. Herein, we unveil and demonstrate a new
application potential of Bi2O2Se/Xene heterostructures
for making steep-slope transistors, as urgently required in the face
of an increasingly challenging power issue. Atomic-scale materials
simulations reveal that nearly Ohmic contact is formed between Bi2O2Se and Xene (graphene and silicene). In forming
the heterointerface, Xene is p-type doped with the Fermi level in
the lower Dirac cone where density of states of electrons is a decreasing
function of energy. This property and the high electrostatic controllability
of the barrier height at the vdW interface naturally satisfy the material
requirements of the steep-slope “cold-source” transistor.
Device modelings confirm that the n-type Bi2O2Se transistor with graphene or silicene as the source is indeed a
steep-slope transistor, with a room-temperature sub-threshold swing
below 50 mV/decade. Compared to normal Bi2O2Se transistor and steep-slope tunneling transistor, the “cold-source”
Bi2O2Se transistor also exhibits a higher drive
current. This work provides an atomistic understanding of Bi2O2Se/Xene-based steep-slope transistors and opens a new
direction in precision vdW contact engineering toward achieving nanoscale
electronic devices for applications in a low-power integrated circuit.