Applications of Highly-Nonlinear Chalcogenide Glass Devices Tailored for High-Speed All-Optical Signal Processing

Pelusi, Mark; Ta'eed, V.G.; Fu, Libin; Mägi, Eric; Lamont, Michael R. E.; Madden, Steve; Choi, Duk‐Yong; Bulla, Douglas; Luther‐Davies, Barry; Eggleton, Benjamin J.

doi:10.1109/jstqe.2008.918669

Cited by 143 publications

(81 citation statements)

References 36 publications

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“…Silicon provides one potential candidate [7,8] but exhibits strong free carrier and twophoton absorption limiting device performance. Chalcogenide (e.g., As 2 S 3 ) glass is an alternative that does not exhibit two-photon absorption [9][10][11][12]; however, it has a relatively low damage threshold (9 GW/ cm 2 [13]) compared to Ta 2 O 5 [14]. Both of the above two examples have large normal material dispersion, which can be detrimental to wavelength division multiplexing applications but can be compensated by adjusting the waveguide geometry dimensions [7][8][9][10][11][12].…”

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confidence: 99%

“…Chalcogenide (e.g., As 2 S 3 ) glass is an alternative that does not exhibit two-photon absorption [9][10][11][12]; however, it has a relatively low damage threshold (9 GW/ cm 2 [13]) compared to Ta 2 O 5 [14]. Both of the above two examples have large normal material dispersion, which can be detrimental to wavelength division multiplexing applications but can be compensated by adjusting the waveguide geometry dimensions [7][8][9][10][11][12]. Here we investigate Ta 2 O 5 rib planar waveguides as an alternative for compact optical devices with a small effective area that could enable the exploitation of nonlinear effects at low light intensity in the telecoms window.…”

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Chi 3 dispersion in planar tantalum pentoxide waveguides in the telecommunications window

2009

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We report on the dispersion of the third-order nonlinear susceptibility ( ͑3͒ or "Chi 3") in planar Ta 2 O 5 waveguides in the telecommunications spectral window. We utilize the observation of third-harmonic generation under ultrashort pulsed excitation as a reference-free characterization method of ͑3͒ and obtain a large nonlinear coefficient, 2 ϫ 10 −13 esu, at 1550 nm. Our observation of efficient third-harmonic generation in Ta 2 O 5 waveguides in the telecoms window reveals the potential of this material system in high-speed integrated nonlinear optical switches. © 2009 Optical Society of America OCIS codes: 160.4330, 230.7390, 190.2620 Fast low-power all-optical switches are a key component for high-bit-rate communication systems. Silica optical fibers are currently used owing to their low loss. However, the small nonlinear refractive index of silica [1-3] requires high switching powers and very long interaction lengths. To achieve compact switching devices, a large nonlinear refractive index ͑n 2 ͒ is required. Although many materials with a higher nonlinear refractive index than silica have been reported [2,4-6], there is a particular interest in those compatible with planar processing technologies, with minimal losses and absorption at a wide range of operating wavelengths, and good thermal and mechanical robustness. Silicon provides one potential candidate [7,8] but exhibits strong free carrier and twophoton absorption limiting device performance. Chalcogenide (e.g., As 2 S 3 ) glass is an alternative that does not exhibit two-photon absorption [9][10][11][12]; however, it has a relatively low damage threshold (9 GW/ cm 2 [13]) compared to Ta 2 O 5 [14]. Both of the above two examples have large normal material dispersion, which can be detrimental to wavelength division multiplexing applications but can be compensated by adjusting the waveguide geometry dimensions [7][8][9][10][11][12]. Here we investigate Ta 2 O 5 rib planar waveguides as an alternative for compact optical devices with a small effective area that could enable the exploitation of nonlinear effects at low light intensity in the telecoms window. Ta 2 O 5 has been widely used as a high dielectric gate material for microelectronic devices, and multilayer dielectric mirrors, and more recently it was shown to possess a high nonlinear refractive index at 800 nm [1,14].Silicon dioxide ͑SiO 2 ͒ clad Ta 2 O 5 planar rib waveguides are grown following the methodology in [15]. We examine the nonlinear optical properties of 5-mm-long waveguides with 750 nm core thickness and 2.5 m (sample A) and 18 m (sample B) width. Figure 1 shows a cross-sectional scanning electron microscope view of two waveguides. The samples are optically excited using an optical parametric amplifier tunable in the near IR (280 fs pulses) with no laser-induced damage to the waveguides.We characterize the nonlinear optical properties of the rib waveguides by spectrally and spatially resolving the guided optical modes at the end face of the rib structure in both the near-IR an...

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Chi 3 dispersion in planar tantalum pentoxide waveguides in the telecommunications window

2009

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“…[1][2][3] These materials have been potentially used for infrared sensor, 4 phase change memory, 5 the all-optical switch and wavelength conversion in high-speed optical signal processing, 6 several passive and active fibre-or waveguide-based optical devices. [7][8][9][10][11] In the binary As-S ChGs, As 2 S 3 glass has chemical durability due to the average coordination number close to the critical coordination number of 2.4.…”

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Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Zou

Shen

et al. 2013

AIP Advances

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The photoconductivity of amorphous As 2 S 8 chalcogenide film under the irradiation of bandgap light is investigated. In the temperature range 300-350 K, the dark conductivity and photoconductivity of the annealed As 2 S 8 film increase with the temperature, and the dependence of the both on temperature shows that the conduction in As 2 S 8 film is an activated process having single activation energy. Under the irradiation of bandgap light, the photocurrents of the annealed and illuminated As 2 S 8 film increase with the irradiation intensity, and their difference indicates the existence of the light-soaked effect. Meanwhile, the photoconductivity degradation during the irradiation and the photocurrent decay after stopping the irradiation are observed. By adding the irradiation of the sub-bandgap light, the enhancement of photoinduced voltage occurs. C 2013 Author(s)

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“…3,4 The flexibility of ChGs towards micro-and nano-fabrication processing by means of nano-imprint lithography, 5 etching, 6 and direct laser writing of 2D photonic structures [7][8][9] together with their unique material parameters make ChGs promising candidates for numerous optical applications. ChGs have, for example, already been integrated into high-speed all-optical devices through four-wave mixing and cross phase modulation devices, 10 optoelectrophoretic sensors for detection of microorganisms, 11 and three-dimensional photonic crystals. 7 Meanwhile, progress in methods for generating and detecting terahertz (THz) radiation has spectacularly increased the interest of its applications in a variety of fields, e.g., in spectroscopy of organic tissues, 12 chemical compounds, 13 proteins, 14 and solid materials.…”

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“…The former has become a widely used material for many optical applications due to its material parameters and flexibility towards fabrication. 2,6,7,10 The GaLaS glass with the composition 70Ga 2 S 3 :30La 2 S 3 , on the other hand, is not so exploited yet. It is a material which shows high stability and resistance to mechanical and chemical wear thus making it an interesting material to be used for devices operating in harsh environments.…”

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Ultrabroadband terahertz spectroscopy of chalcogenide glasses

Zalkovskij

Bisgaard

Novitsky

et al. 2012

Applied Physics Letters

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Chalcogenide glasses are receiving a lot of attention due to their unique optical properties. In this paper we study the optical properties of As2S3 and GaLaS glasses in a broad terahertz (THz) frequency range (0.2-18 THz). Complex dispersion behavior with drastic changes of refractive index and absorption coefficient is found for both glasses. We observe the breakdown of the universal power-law dependence of the absorption coefficient due to atomic vibrations observed at low THz frequencies in disordered materials, and see the transition to localized vibrational dynamics for the As2S3 compound at higher frequencies. In addition, As2S3 displays two transparency regions, at 7-8 THz and 12.2 THz, of potential interest for future nonlinear applications in the THz range.

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Applications of Highly-Nonlinear Chalcogenide Glass Devices Tailored for High-Speed All-Optical Signal Processing

Cited by 143 publications

References 36 publications

Chi 3 dispersion in planar tantalum pentoxide waveguides in the telecommunications window

Chi 3 dispersion in planar tantalum pentoxide waveguides in the telecommunications window

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Ultrabroadband terahertz spectroscopy of chalcogenide glasses

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