Applications of SiC MESFETs and GaN HEMTs in power amplifier design

Pribble, W.L.; Palmour, John W.; Sheppard, S.T.; Smith, R.P.; Allen, Scott T.; Smith, T.J.; Ring, Z.; Sumakeris, Joseph J.; Saxler, A.; Milligan, J.W.

doi:10.1109/mwsym.2002.1012216

Cited by 56 publications

(26 citation statements)

References 3 publications

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“…At V d = 40 V, the device demonstrated a saturated output power of 113 W with a linear gain of 6.8 dB at 1.5 GHz [12]. This pulsed output power is almost comparable to the best CW output power of 102 W reported on a SiC substrate having a total gate width of 24 mm [13]. High-bias-voltage power operation was also examined for a 0.25-µm gate FET at pseudo-millimeter-wave frequencies.…”

Section: Power Performancesupporting

confidence: 52%

AlGaN/GaN heterojunction FETs for high‐power applications

Kuzuhara

Ando

Inoue

et al. 2003

Electron Comm Jpn Pt II

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SUMMARYGaN and its heterojunction structures are attracting considerable attention as materials for high-voltage, highfrequency power device applications. This paper gives an overview of the basic device structure, process technology, and recent device performance achieved with AlGaN/GaN heterojunction FET structures. The emphasis is on the performance of power amplifiers developed for use in cellular base station transmitters and pseudo-millimeter-wave wireless access systems. Future research topics and prospects of nitride-based transistors are also discussed.

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Section: Power Performancesupporting

confidence: 52%

AlGaN/GaN heterojunction FETs for high‐power applications

Kuzuhara

Ando

Inoue

et al. 2003

Electron Comm Jpn Pt II

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“…It has to be noted that 0.25 mm devices with a FP-extension of 0.5µm towards the drain contact, i.e. their extension towards the drain is 0.25µm longer than the extension of the top of the T-gates, yield a [1,3,[10][11][12][13]. It can be concluded that we have achieved state-of-the-art results with respect to the generation of large, i.e.…”

Section: Large-periphery Devicesmentioning

confidence: 96%

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

et al. 2008

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We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (W g ) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH 4 OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 -4 GHz) under class AB bias conditions (V DS = 40 -60 V, and V GS = -4.65 --4.0 V).

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“…The characteristics of several MESFETs based on such a semi-insulating substrate have been reported. According to such reports, the hysteresis of the static characteristics and the variations of the drain current have been reduced [32] and improved efficiency is exhibited by the high-frequency output characteristics [33].…”

Section: Drain Current Variations Of Mesfetmentioning

confidence: 99%