Applications of vertical cavity surface emitting lasers for low-pressure chemical vapor deposition reactors

Experimental Activation Energy for Solid Phase Crystallization of Amorphous Silicon Thin Films at Elevated Temperatures Using Vertical-Cavity Surface-Emitting Laser-Based Infrared Heating

“…Each VCSEL emitter consisted of 56 chips, each of which consisted of 2200 cells (30 μm) within the area of 2 mm × 2 mm and emitted thermal radiation of intensities up to 100 W cm −2 with a wavelength of 980 nm. 25 To guarantee effective heating rates of approximately 200 °C s −1 , a 500 μm thick Si wafer was used as a heating element, i.e., a susceptor, and was placed on amorphous Si thin films with the aim of absorbing high-power infrared illumination at 980 nm wavelength, as shown in Fig. 1.…”

“…The total emissivity of the Si wafers was obtained by integrating the spectral emissivity over the wavelength at a given surface temperature, and the values increased drastically, especially in the temperature range of 350 °C to 550 °C. 25 The total emissivity of the glass substrates was assumed to be 0.9, as suggested by Reynolds et al study. 30 The optical reflectance of the Si wafer for VCSEL illumination at the wavelength of 980 nm was calculated using the spectral reflectance relation, 31 as shown below:…”

Vertical-cavity surface-emitting laser (VCSEL)-based ultrafast photonic sintering of solid oxide fuel cells (SOFCs): prospects for time-efficient/two-dimensional scalability to large-sized SOFCs

“…17,18 Thousands of VCSEL units are arranged, each with a diameter of a few micrometers, and emits a laser beam with a constant wavelength, and the beams overlap to produce a high output density. 19 VCSELs can achieve a high-temperature heating rate due to their high output density, which enables a rapid thermal annealing process in the range of ms to s. The IR laser generated from VCSEL modules directly heats the material through IR lightmaterial optothermal coupling or interactions using an accurately controlled temperature increase rate of 10 2 -10 3 °C min −1 , which enables rapid sintering of the SOFCs.…”