Applications of Wide Bandgap (WBG) devices in AC electric drives: A technology status review

Electrothermal Design of a Discrete GaN-Based Converter for Integrated Modular Motor Drives

“…It has a small propagation delay, an under voltage lockdown (UVLO) of 3V suitable for the driving voltage (V gon ) of the switch of 6V and a suitable source/sink current of 4A. The external turn on gate resistance (R gon ) and turn off resistance (R gof f ) should be selected to satisfy the inequalities in (10) and (11), other wise the turn on/off speed of the switch will be limited by the current limit of the driving IC. Any value greater than or equal to zero for R gon and R gof f would satisfy the inequalities.…”

“…The most challenging aspect to meet in the design of the IMMDs is the thermal management of the inverter modules due to their close proximity to the heat sources in the machine and the small space available for each inverter module [9]- [10]. These challenges can be met by utilizing wideband gap devices (GaN, SiC) in the implementation of the inverter modules [11]- [12] thanks to their small package size for the same voltage and current rating and low losses [13].…”

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

“…There are a plethora of applications where these devices had been used and have shown their positive impact, and many more potential applications are on the horizon [21][22][23]. Although there are different kinds of SiC devices available, the most interesting ones are Schottky diodes and MOSFETs.…”

Homopolar Current's Copper Losses Analysis for Different Modulations in Open-End Winding Five-Phase Drives

“…NTEGRATED drive main advantage is its potential high power drive density, especially because only one thermal cooling system is used for the machine and the Voltage Source Inverter (VSI). Other advantages are observed for this kind of drive such as elimination of AC cables, a better Electromagnetic Compatibility and a simplified packaging for use in complex systems such as hybrid automotive [1]- [7]. Otherwise, the main concerns of this drive architecture are the thermal constraints, especially for the most delicate components of the drive such as the Si transistors and the magnets [1], [4].…”

“…Otherwise, the main concerns of this drive architecture are the thermal constraints, especially for the most delicate components of the drive such as the Si transistors and the magnets [1], [4]. With wide-gap transistors SiC or GaN with maximum temperature of the same order as the windings, this constraint should be reduced in the future [1], [3]- [7].…”