Applied electric and magnetic fields effects on the nonlinear optical rectification and the carrier's transition lifetime in InAs/GaAs core/shell quantum dot

Makhlouf, D.; Choubani, M.; Saidi, F.; Maaref, Hichem

doi:10.1016/j.matchemphys.2021.124660

Cited by 37 publications

(7 citation statements)

References 30 publications

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“…4(c), where a delta-like doping volume density of n d = 4.5 × 10 19 cm −3 is combined with an applied electric field of 30 kV/cm (developments in high electric fields can be seen in Ref. [73,74]), it is possibel to see that, by breaking the symmetry of the system, the ground state is pushed towards the left-hand side well structure while, due to orthogonality conditions, the first excited state displaces its maximum towards the right-side of the system. The ground state has a quasiconstant probability density in the region −5 nm< z < 0.…”

Section: A Results Quantum Wellmentioning

confidence: 99%

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

et al. 2022

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Section: A Results Quantum Wellmentioning

confidence: 99%

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

et al. 2022

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“…where, ℏ is the reduced Planck constant and 𝑚 * (𝑃, 𝑇) is the conduction band electron effective mass for the 𝛤 valley, which is given by Vurgaftman formula depending on the hydrostatic pressure and temperature as [27,28] 𝑚 * (𝑃, 𝑇) = 𝑚 0…”

Section: Schrödinger's Wave Equationmentioning

confidence: 99%

“…where 𝑚 0 is the free electron mass, 𝛾 is the Kane parameter, 𝐸 𝑃 Γ is the energy associated with the momentum matrix element at 𝛤, Δ 𝑆𝑂 is the spin-orbit splitting, and 𝐸 𝑔 Γ is the energy gap at 𝛤 defined by the empirical Varshni expression depending on pressure and temperature as [28,29]…”

Section: Schrödinger's Wave Equationmentioning

confidence: 99%

The nonlinear optical properties of self-assembled InAs/GaAs quantum dot under effect of temperature and hydrostatic pressure

Jaouane

El-Bakkari

et al. 2023

Preprint

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In this study, we have scrutinized the influences of the temperature \(\left(T\right)\) and hydrostatic pressure \(\left(P\right)\) on the nonlinear and linear optical properties of a core/shell quantum dot (QD) system with Screened Modified Kratzer potential (SMKP). To realize this goal, we have examined the energy levels and their associated wave functions using the diagonalization method within the effective mass approximation. Analytical terms for absorption coefficients (ACs) and relative refractive index changes (RRICs) are exploited by means of the density matrix approach. The numerical outcomes are offered for typical InAs/GaAs core/shell QD system. The dependency of SMKP, dipole transition matrix element and electron energies of the ground (\(1s\)) and first excited state (\(1p\)) on the \(P\) and \(T\) that are varied over a range. Obtained numerical calculation results revealed that the \(P\) and \(T\) impacts the magnitude and position of the resonant peaks that characterize the ACs and RRICs.

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“…B. Alén et al carried out studies on the oscillator strengths and lifetime under the external electric field effect in self-assembled QD and rings; they demonstrated that the moderate electric field increases the lifetime of the exciton [39]. D. Makhlouf et al studied the effects of applied electric and magnetic fields, pressure, and temperature on a lifetime in InAs/GaAs core/shell QD, and their results exhibit that the applied electric and magnetic fields have a significant impact on the carrier's lifetime [40]. The intense laser field effects on the exciton lifetime in GaAs-Ga 1−x Al x As quantum wells show that the lifetime increases when the laser intensity increases [41].…”

Section: Introductionmentioning

confidence: 99%

Optical Gain of a Spherical InAs Quantum Dot under the Effects of the Intense Laser and Magnetic Fields

et al. 2023

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In quantum dots, where confinement is strong, interactions between charge carriers play an essential role in the performance of semiconductor materials for optical gain. Therefore, understanding this phenomenon is critical for achieving new devices with enhanced features. In this context, the current study examines the optical properties of an exciton confined in a spherical InAs quantum dot under the influence of magnetic and intense laser fields. We investigate the oscillator strength, exciton lifetime, and optical gain, considering the effects of both external fields. We also pay particular attention to the influence of quantum dot size on the results. Our calculations show that the two external fields have opposite effects on our findings. Specifically, the applied magnetic field increases the oscillator strength while the intense laser reduces it. In addition, the optical gain peaks are redshifted under the application of the intense laser, whereas the magnetic field causes a blueshift of the peak threshold. We also find that both external perturbations significantly influence the exciton lifetime. Our study considers the outcomes of both the exciton’s ground (1s) and first excited (1p) states. The theoretical results obtained in this study have promising implications for optoelectronic devices in the ∼3–4 μm wavelength range only through the control of quantum dot sizes and external perturbations.

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Applied electric and magnetic fields effects on the nonlinear optical rectification and the carrier's transition lifetime in InAs/GaAs core/shell quantum dot

Cited by 37 publications

References 30 publications

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

The nonlinear optical properties of self-assembled InAs/GaAs quantum dot under effect of temperature and hydrostatic pressure

Optical Gain of a Spherical InAs Quantum Dot under the Effects of the Intense Laser and Magnetic Fields

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