2007
DOI: 10.1016/j.vacuum.2007.04.035
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Applying RF current harmonics for end-point detection during etching multi-layered substrates and cleaning discharge chambers with NF3 discharge

Abstract: The present paper reports the results of studying the characteristics of the etching process of multi-layered materials (Si 3 N 4 /SiO 2 /Si and SiO 2 /Si) and of cleaning technological chambers covered with silicon nitride films (Si 3 N 4 ) in a NF 3 RF capacitive discharge. The process of chamber cleaning was monitored with a mass spectrometer. The gas pressure, RF voltage amplitude, current-voltage phase shift, ohmic current as well as the second harmonic of the RF current were also recorded. The opportunit… Show more

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Cited by 9 publications
(4 citation statements)
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“…Since higher harmonics sensitively react to plasma parameters such as electron concentration and collision frequency or discharge asymmetry, they can be used for monitoring plasma processes. They are used, e.g., for monitoring the end-point detection of etching processes [15,16], monitoring the compound layer on magnetron targets [17,18] or dust growth [19][20][21] and for the measurement of electron concentration and collision frequency [22].…”
Section: Introductionmentioning
confidence: 99%
“…Since higher harmonics sensitively react to plasma parameters such as electron concentration and collision frequency or discharge asymmetry, they can be used for monitoring plasma processes. They are used, e.g., for monitoring the end-point detection of etching processes [15,16], monitoring the compound layer on magnetron targets [17,18] or dust growth [19][20][21] and for the measurement of electron concentration and collision frequency [22].…”
Section: Introductionmentioning
confidence: 99%
“…The complex process of creation and damping of higher harmonic frequencies results in a sensitive reaction of higher harmonics to changes in plasma parameters which can be used for diagnostic purposes. They are used for the detection of dust growing in the plasma [8][9][10], determination of the end of an etching process [11,12], monitoring of a compound layer on the magnetron target [13,14] or measurement of electron concentration and collisional frequency [15].…”
Section: Introductionmentioning
confidence: 99%
“…The fact that the amplitude of higher harmonic frequencies depends on electron concentration is important for an explanation of some monitoring techniques that are used in deposition or etching processes. Higher harmonics are used for end-point detection of etching processes [15][16][17] and for detection of mode transition in reactive magnetron sputtering [17,18]. Both these monitoring techniques rely on the sensitive reaction of higher harmonic frequencies on electron concentration, whether its behaviour is controlled by surface processes or volume ionization [17,19].…”
Section: Examples Of Measured Waveformsmentioning
confidence: 99%