Approaches to the Design of Radiation‐Sensitive Polymeric Imaging Systems with Improved Sensitivity and Resolution

Willson, C. Grant; Itô, Hiroshi; Fréchet, Jean M. J.; Tessier, T.G.; Houlihan, Francis M.

doi:10.1149/1.2108519

Cited by 159 publications

(66 citation statements)

References 14 publications

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“…The T c for the conventional polyphthalaldehyde is around -43 °C. Willson and Ito have reported the use of a KrF excimer laser, to irradiate polyphthalaldehyde without addition of photoacid generators, to yield clean, spontaneous "self-development" to the substrate [34]. We are seeking to investigate the properties of this polymer when exposed to 193 nm light.…”

Section: Polyphthalaldehydesmentioning

confidence: 99%

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

et al. 2010

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The feasibility of three polymer systems for use as non chemically amplified resists for 193 nm lithography are discussed. The three systems are polycarbonates, polyphthalaldehydes and polysulfones. In general it was found that increased absorbance resulted in higher sensitivity to 193 nm light. However, the exception to this was the polycarbonates, which were found to undergo crosslinking due to an alkene group present in the polymer backbone. Although polyphthalaldehydes were very sensitive, their absorbance values were too high to be useful in a commercial environment. Absorbing polysulfones were found to be sensitive to 193 nm light and initial patterning results have been presented.

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Section: Polyphthalaldehydesmentioning

confidence: 99%

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

et al. 2010

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“…18 Epoxide resins containing a PAG are routinely used for two-dimensional lithographic patterning. 19,20 Conventional ultraviolet (UV)-sensitive PAGs, such as diaryliodonium and triarylsulfonium cations, have been used for two-photon microfabrication. 21 However, the TPA cross-sections of these initiators are typically very small (δ ≤ 10 10 -50 cm 4 s photon -1 ), and as a result they exhibit low two-photon sensitivity.…”

Section: Design Of a Two-photon-activatable Photoacid Generatormentioning

confidence: 99%

High-sensitivity material systems for two-photon three dimensional microfabrication

et al. 2004

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A photoacid generator (PAG) is described that can be efficiently activated by two-photon excitation and can be used for high-sensitivity three-dimensional micro-patterning of acid-sensitive media. The molecule has been specifically engineered to have both a large peak two-photon absorption cross section (δ = 690 × 10 -50 cm 4 s photon -1 at 705 nm) and a high quantum yield for the photochemical generation of acid (φ H + ≈ 0.5). Under near-infrared laser irradiation, the PAG produces acid subsequent to two-photon excitation and initiates the polymerization of epoxides. The PAG was used in conjunction with the epoxide resist SU-8 for negative-tone three-dimensional microfabrication and was incorporated into a specially formulated chemically amplified resist for positive-tone fabrication of a three-dimensional grating structure. These material systems expand the potential of three-dimensional microfabrication as a tool for manufacturing micro-electromechanical systems, micro-fluidics, and micro-optical structures.

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“…Results of several reaction kinetics studies have been published to support the PEB modeling of CARs. Some of the early investigations on the reaction kinetics were performed by Willson [16], Fedynyshyn [17] and Reichmanis [18]. Seligson et al demonstrated that a reciprocity existed between the exposure dose, the bake temperature, and the bake time and expressed this reciprocity mathematically as an "effective dose" [19].…”

Section: Modeling the Post Exposure Bakementioning

confidence: 99%

Survey of chemically amplified resist models and simulator algorithms

et al. 2001

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Modeling has become indespensable tool for chemically amplified resist (CAR) evaluations. It has been used extensively to study acid diffusion and its effects on resist image formation. Several commercial and academic simulators have been developed for CAR process simulation. For commercial simulators such as PROLITH (Finle Technologies) and Solid-C (Sigma-C), the user is allowed to choose between an empirical model or a concentration dependant diffusion model. The empirical model is faster but not very accurate for 2-dimension resist simulations. In this case there is a trade off between the speed of the simulator and the accuracy of the results.An academic simulator such as STORM (U.C. Berkeley) gives the user a choice of different algorithms including Fast Imaging 2nd order finite difference algorithm and Moving Boundary finite element algorithm. A user interested in simulating the volume shrinkage and polymer stress effects during post exposure bake will need the Moving Boundary algorithm whereas a user interested in the latent image formation without polymer deformations will find the Fast Imaging algorithm more appropriate. The Fast Imaging algorithm is generally faster and requires less computer memory. This choice of algorithm presents a trade off between speed and level of detail in resist profile prediction.This paper surveys the different models and simulator algorithms available in the literature. Contributions in the fiel of CAR modeling including contributions to characterization of CAR exposure and post exposure bake (PEB) processes for different resist systems. Several numerical algorithms and their performances will also be discussed in this paper.

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Approaches to the Design of Radiation‐Sensitive Polymeric Imaging Systems with Improved Sensitivity and Resolution

Cited by 159 publications

References 14 publications

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

High-sensitivity material systems for two-photon three dimensional microfabrication

Survey of chemically amplified resist models and simulator algorithms

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