ZrCoSb-based half-Heusler compounds have shown outstanding
thermoelectric
and mechanical properties, making them highly promising for practical
applications. However, most optimization strategies have focused on
doping costly Hf at the Zr sites. Here, the structural evolution,
thermoelectric properties, and transport mechanisms of ZrCoSb0.8–x
Sn0.2Bi
x
compounds co-doped with less-costly Sn and Bi at
Sb sites were investigated. Specifically, grains were refined via
Bi doping, which introduced grain boundary scattering at low temperatures.
The effect of grain-boundary scattering on electron transport weakened
and became less pronounced at higher temperatures. Thus, the discrepancy
in the weighted mobility of ZrCoSb0.8–x
Sn0.2Bi
x
compounds was
reduced. Furthermore, increasing Bi doping level significantly reduced
the lattice thermal conductivity due to the introduction of large
mass and strain field fluctuations. As a result, the trade-off between
the weighted mobility and the lattice thermal conductivity at high
temperatures enabled the dimensionless figure of merit (ZT) for ZrCoSb0.71Sn0.2Bi0.09 to be
0.68 at 973 K, an enhancement of 44.6% relative to the single Sn-doped
ZrCoSb compound. Overall, this work demonstrates the feasibility of
enhancing ZT via co-doping only at the Sb site, and
it highlights microstructure effects on thermoelectric properties.