Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications

Abstract

Solution-grown indium oxide (In2O3) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In2O3 TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam’s theory, among potential dopants, phosphorus (P) has a large dopant–oxygen bonding strength (EM-O) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In2O3 (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high EM-O and L is promising for emerging oxide TFTs.

Electrical performance of La-doped In2O3 thin-film transistors prepared using a solution method for low-voltage driving

“…Among these materials In 2 O 3 is a highly representative material. It has high mobility because of overlapping In 5s orbitals 5,6 and has a wide bandgap and high transparency compared with conventional amorphous silicon. Moreover, amorphous metal oxides are highly deformable, and they can be used to fabricate wearable transparent flexible electronic devices on flexible substrates.…”