Ar implantation beneath graphene on Ru(0001): Nanotents and “can-opener” effect

Cun, Huanyao; Iannuzzi, Marcella; Hemmi, Adrian; Osterwalder, Jürg; Greber, Thomas

doi:10.1016/j.susc.2014.11.004

Cited by 19 publications

(18 citation statements)

References 54 publications

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“…In the past few years, ion-induced damage and annealing of Gr on a metal substrate has been intensely investigated: trapping of single noble gas ions under Gr on Ru(0001) [38]; formation of highly pressurized gas blisters under Gr on Pt(111) [39], Ir(111) [40][41][42], Ir(100) [43], and Ni(111) [44,45] upon annealing subsequent to noble gas implantation, damage evolution with ion energy [46]; formation of a regular arrangement of vacancy clusters with moiré periodicity (nanomesh) [47]; interface channeling [47]; and sputter protection of the substrate through a Gr cover [48]. In these studies, room-temperature irradiated Gr demonstrated a remarkable ability to self-repair upon annealing, which one might relate to the flexible bond reorganization in this material.…”

Section: Introductionmentioning

confidence: 99%

Annealing of ion-irradiated hexagonal boron nitride on Ir(111)

et al. 2017

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Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir (111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.

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Section: Introductionmentioning

confidence: 99%

Annealing of ion-irradiated hexagonal boron nitride on Ir(111)

et al. 2017

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“…With similar low ion energies substitutional N implantation of Gr on SiC was accomplished by Telychko et al 19 . For low energies and fluences (negligible damage), Cun et al [20][21][22][23] demonstrated that implanted Ar + ions may come to rest under a 2D-layer strongly adhering to a metal surface and remain there upon annealing. In a recent comment 24 to a paper by Herbig et al 25 , we pointed out that Xe + irradiation of Gr on Ir(111) is accompanied by Xe trapping at the interface.…”

Section: Introductionmentioning

confidence: 99%

Xe irradiation of graphene on Ir(111): From trapping to blistering

et al. 2015

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Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy we show that upon keV Xe + irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trapping is an unexpected and remarkable phenomenon, given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trapping. We describe ways to avoid blister formation during graphene growth, and also demonstrate how ion implantation can be used to intentionally create blisters without introducing damage to the graphene layer. Our approach may provide a pathway to synthesize new materials at a substrate -2D material interface or to enable confined reactions at high pressures and temperatures.

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“…For supported 2D systems, the evolution of defects, e.g., vacancies, may also be dominated by the interaction of defects with the substrate. [42][43][44]…”

Section: Response Of 2d Materials To Energetic Particle Irradiationmentioning

confidence: 99%