2020
DOI: 10.1016/j.apsusc.2020.147182
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Ar+ ion bombardment dictates glycine adsorption on pyrite (1 0 0) surface: X-ray photoemission spectroscopy and DFT approach

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Cited by 9 publications
(6 citation statements)
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“…46 During the XPS etching process, the high energy argon ion bombardment may generate substantial sulfur vacancies through a preferential sputtering mechanism. 48 However, after being cyclically oxidized in the presence of 0/10 mM NTA, the quantity of sulfur vacancy formed in the oxidized pyrite structure is significantly higher than that in the presence of 0.1 mM NTA and pristine pyrite (Figure S1c). In theory, changes in density and bond energies with composition may affect equilibrium sputtering yields for compounds; 49 therefore, it can be concluded that the cyclically oxidized pyrite in the presence of 0/10 mM NTA may have a more unstable internal structure.…”
Section: ■ Results and Discussionmentioning
confidence: 97%
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“…46 During the XPS etching process, the high energy argon ion bombardment may generate substantial sulfur vacancies through a preferential sputtering mechanism. 48 However, after being cyclically oxidized in the presence of 0/10 mM NTA, the quantity of sulfur vacancy formed in the oxidized pyrite structure is significantly higher than that in the presence of 0.1 mM NTA and pristine pyrite (Figure S1c). In theory, changes in density and bond energies with composition may affect equilibrium sputtering yields for compounds; 49 therefore, it can be concluded that the cyclically oxidized pyrite in the presence of 0/10 mM NTA may have a more unstable internal structure.…”
Section: ■ Results and Discussionmentioning
confidence: 97%
“…However, as the etching depth increases to 50–200 nm, an obvious S­(-II) peak at 161.2 eV occurs in each pyrite sample, which is assigned to sulfur vacancies in the pyrite structure . During the XPS etching process, the high energy argon ion bombardment may generate substantial sulfur vacancies through a preferential sputtering mechanism . However, after being cyclically oxidized in the presence of 0/10 mM NTA, the quantity of sulfur vacancy formed in the oxidized pyrite structure is significantly higher than that in the presence of 0.1 mM NTA and pristine pyrite (Figure S1c).…”
Section: Resultsmentioning
confidence: 99%
“…This is because there is no interaction between the S III atom and the atoms on the ideal surface. DFT calculation results in the literature 13 also show that S III atoms are easily detached from the surface.…”
Section: Reconstruction Of Surface Stabilitymentioning
confidence: 79%
“…Later researchers used argon-ions to bombard the surface of FeS 2 , and S atoms on the surface missing after bombardment, resulting in the surface Fe 2+ -Fe 3+ . 9,13 At the same time, Fe atoms with missing coordination combine easily with OH. 14 During the acid leaching process, a passivation layer is formed on the surface of chalcopyrite, and XPS detection analysis reveals the presence of S 4 2À species in the passivation layer.…”
Section: Introductionmentioning
confidence: 99%
“…The Ar + bombardment causes substantial disordering of crystal and electronic structures, reduction of some elements, and so on, so the information on the chemical state of atoms will be lost; moreover, elemental composition can change under the ion beam, too. For example, ion bombardment of pyrite results in preferential removal of S atoms, producing disordered layer with high-spin Fe 2+ /Fe 3+ cations and sulfide anions instead of singlet ferrous iron and disulfide groups [126,127]. Nevertheless, the Ar + bombardment is often employed for depth-profiling down to about 100 nm, although for rough and inhomogeneous surfaces of real, oxidized sulfide minerals it provides semi-quantitative concentration distributions at best.…”
Section: Ion Sputtering and Depth Profilingmentioning
confidence: 99%