Arbitrary and Parallel Nanofabrication of 3D Metal Structures with Polymer Brush Resists

Chen, Chaojian; Xie, Zhuang; Wei, Xiaoling; Zheng, Zijian

doi:10.1002/smll.201500796

Cited by 14 publications

(18 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar to p‐DPN, parallel (p‐DNL) using tip arrays also significantly improves the throughput while maintaining the feature deviation over a larger area to be less than 5%. The cm‐size DNL‐generated polymer brushes could serve as an etching resist to construct and pattern metal structures for optical applications, and were employed as an extra‐cellular matrix to study the cell adhesion …”

Section: Development Of Dpn and Its Derivativesmentioning

confidence: 99%

Development of Dip‐Pen Nanolithography (DPN) and Its Derivatives

Liu

Hirtz

Fuchs

et al. 2019

Small

Self Cite

View full text Add to dashboard Cite

Dip‐pen nanolithography (DPN) is a unique nanofabrication tool that can directly write a variety of molecular patterns on a surface with high resolution and excellent registration. Over the past 20 years, DPN has experienced a tremendous evolution in terms of applicable inks, a remarkable improvement in fabrication throughput, and the development of various derivative technologies. Among these developments, polymer pen lithography (PPL) is the most prominent one that provides a large‐scale, high‐throughput, low‐cost tool for nanofabrication, which significantly extends DPN and beyond. These developments not only expand the scope of the wide field of scanning probe lithography, but also enable DPN and PPL as general approaches for the fabrication or study of nanostructures and nanomaterials. In this review, a focused summary and historical perspective of the technological development of DPN and its derivatives, with a focus on PPL, in one timeline, are provided and future opportunities for technological exploration in this field are proposed.

show abstract

Section: Development Of Dpn and Its Derivativesmentioning

confidence: 99%

Development of Dip‐Pen Nanolithography (DPN) and Its Derivatives

Liu

Hirtz

Fuchs

et al. 2019

Small

Self Cite

View full text Add to dashboard Cite

show abstract

“…Because the lateral diffusion of initiator molecules is prohibited by the neighboring protecting SAM molecules after displacement, polymer chains grown from the initiated areas exhibit remarkable uniformity at the nanoscale as compared to when other SPL techniques are used to prepare such structures. Through precise control of the feature density and pattern design, DNL has shown promise for making complex 2D and 3D patterned nanostructures . More importantly, DNL is remarkably scalable by using an array of scanning tips .…”

Section: Photovoltaic Parameters Of the Fabricated Oscs Based On Varimentioning

confidence: 99%

“…It is known that the SAMs have defects, such as pinholes and grain boundaries, which result in uncontrollable and undesirable defects in the etched Au patterns. Polymer brushes, on the other hand, act as pinhole‐free resists because they can collapse to cover any defect that may occur during the fabrication process . This is very important when fabricating interconnected nanostructures (vide infra).…”

Section: Photovoltaic Parameters Of the Fabricated Oscs Based On Varimentioning

confidence: 99%

“…Through precise control of the feature density and pattern design, DNL has shown promise for making complex 2D and 3D patterned nanostructures. [33][34][35][36] More importantly, DNL is remarkably scalable by using an array of scanning tips. [37] For example, uniform arrays of polymer nanolines over a cm 2 area were successfully fabricated in just 60 min, and the www.advancedsciencenews.com www.small-journal.com small NANO MICRO substrate was uniform enough to use in cell adhesion studies and cell sheet fabrication.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Large‐Area Patterning of Metal Nanostructures by Dip‐Pen Nanodisplacement Lithography for Optical Applications

Chen

Wei

Zhou

et al. 2017

Small

Self Cite

View full text Add to dashboard Cite

Au nanostructures are remarkably important in a wide variety of fields for decades. The fabrication of Au nanostructures typically requires time-consuming and expensive electron-beam lithography (EBL) that operates in vacuum. To address this challenge, this paper reports the development of massive dip-pen nanodisplacement lithography (DNL) as a desktop fabrication tool, which allows high-throughput and rational design of arbitrary Au nanopatterns in ambient condition. Large-area (1 cm ) and uniform (<10% variation) Au nanostructures as small as 70 nm are readily fabricated, with a throughput 100-fold higher than that of conventional EBL. As a proof-of-concept of the applications in the opitcal field, we fabricate discrete Au nanorod arrays that show significant plasmonic resonance in the visible range, and interconnected Au nanomeshes that are used for transparent conductive electrode of solar cells.

show abstract

“…[22,23] Current strategy to fabricate large-AR metallic nanostructures is to first pattern low-profile resists on a metal thin film through nanofabrication technologies such as nanoimprinting, [24,25] soft lithography, [26,27] electron and ion beam lithography, [28,29] block copolymer lithography, [7] and scanning probe lithography, [30][31][32][33][34] and then transfer the resist pattern to the underlying metal thin film via etching. [35][36][37] However, the major drawback of this "pattern transfer" strategy is the serious structural collapse due to the capillary force in wet etching and/or the undercut in dry etching. Therefore, it has been a significant challenge to fabricate sub-100 metal nanostructure with AR > 2 through pattern transfer.…”

mentioning

confidence: 99%

Scanning Nanowelding Lithography for Rewritable One‐Step Patterning of Sub‐50 nm High‐Aspect‐Ratio Metal Nanostructures

et al. 2018

Self Cite

View full text Add to dashboard Cite

The development of a new nanolithographic strategy, named scanning nanowelding lithography (SNWL), for the one-step fabrication of arbitrary high-aspect-ratio nanostructures of metal is reported in this study. Different from conventional pattern transfer and additive printing strategies which require subtraction or addition of materials, SNWL makes use of a sharp scanning tip to reshape metal thin films or existing nanostructures into desirable high-aspect-ratio patterns, through a cold-welding effect of metal at the nanoscale. As a consequence, SNWL can easily fabricate, in one step and at ambient conditions, sub-50 nm metal nanowalls with remarkable aspect ratio >5, which are found to be strong waveguide of light. More importantly, SNWL outweighs the existing strategies in terms of the unique ability to erase the as-made nanostructures and rewrite them into other shapes and orientations on-demand. Taking advantages of the serial and rewriting capabilities of SNWL, the smart information storage-erasure of Morse codes is demonstrated. SNWL is a promising method to construct arbitrary high-aspect-ratio nanostructure arrays that are highly desirable for biological, medical, optical, electronic, and information applications.

show abstract

Arbitrary and Parallel Nanofabrication of 3D Metal Structures with Polymer Brush Resists

Cited by 14 publications

References 43 publications

Development of Dip‐Pen Nanolithography (DPN) and Its Derivatives

Development of Dip‐Pen Nanolithography (DPN) and Its Derivatives

Large‐Area Patterning of Metal Nanostructures by Dip‐Pen Nanodisplacement Lithography for Optical Applications

Scanning Nanowelding Lithography for Rewritable One‐Step Patterning of Sub‐50 nm High‐Aspect‐Ratio Metal Nanostructures

Contact Info

Product

Resources

About