Archiver, et après ? Anne-Marie Chabin, Paris, Djakarta, 2007, 160 p.

The Effect of Material and Process Interactions on BEOL Integration

“…Damage of the ULK during post-etch removal of photoresist and other masking materials has been known for several years (5,6). The mechanism is generally understood as the removal of carbon from the ULK in the region near feature sidewalls, leaving a more oxide-like film that is hygroscopic and degrades the device's performance and reliability.…”

“…This effect can be avoided by optimization of the downstream process or by altering the cap material precursor or process conditions to reduce the stress change as illustrated in figure 5. Etch and ash interactions Damage of the ULK during post-etch removal of photoresist and other masking materials has been known for several years (5,6). The mechanism is generally understood as the removal of carbon from the ULK in the region near feature sidewalls, leaving a more oxide-like film that is hygroscopic and degrades the device's performance and reliability.…”

The Effect of Material and Process Interactions on Cu/ULK BEOL Integration

“…This paper highlights the observations and solutions to some of the critical material and process interactions encountered during the integration of the back end of line interconnect. Recently in the literature, there have been several reports of material advancements in areas such as ultra low k dielectrics [4,5], liner/seed materials [6,7], and in unit process development such as RIE [8] and CMP [9]. The integration of these new materials and unit processes has introduced additional challenges due to an interaction which has modified the various materials' physical and electrical properties.…”