Are high resolution resistometric methods really useful for the early detection of electromigration damage?

Scorzoni, A.; Franceschini, Samuela; Balboni, R.; Impronta, M.; Munari, Ilaria De; Fantini, Fausto

doi:10.1016/s0026-2714(97)00090-5

Cited by 11 publications

(9 citation statements)

References 5 publications

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“…The evolution is terminated in phase 3 with violent bursts in resistance thus large resistance fluctuations due to healing events. The presence of bursts in the resistance evolution is thus a fingerprint of healing as typically observed in experiments [7]. We note that healing becomes more intense just before the breakdown.…”

Section: And Resultssupporting

confidence: 73%

A Percolative Approach to Reliability of Thin FilmInterconnects and Ultra‐thin Dielectrics

et al. 2001

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Degradation of thin film interconnects and ultra-thin dielectrics is studied within a stochastic approach based on a percolation technique. The thin film is modelled as a two-dimensional random resistor network at a given temperature and its degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed so that a steady-state condition can be achieved. The main features of experiments are reproduced. This approach provides a unified description of degradation and failure processes in terms of physical parameters.

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Section: And Resultssupporting

confidence: 73%

A Percolative Approach to Reliability of Thin FilmInterconnects and Ultra‐thin Dielectrics

et al. 2001

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“…Usually, CE are observed at the early stages of EM in metallic lines of Al alloys like Al-Cu and Al-Si. Experiments in Al-1%Si and Al-0.5%Cu lines, by using standard median time to failure and high resolution resistometric (HRR) measurements, have been reported by some of the authors in [26][27][28][29], while other experimental evidences of CE are reported in [4,24,25]. CE are due to a variation of the fraction of the solute species (typically Cu or Si) dissolved in the Al matrix as a consequence of (i) temperature variation [26][27][28][29]; (ii) solute precipitation assisted by the electron wind [4,27].…”

Section: Compositional Effectsmentioning

confidence: 99%

“…Another special kind of CE (iii) can be considered the anomalous short MTF of a set of samples, apparently similar (same geometry and resistance) to another set of long-MTF samples. In this case the initial defectiveness affecting the structure well before applying the current stress, is compared to a microstructure with a minor degree of compositional disorder [4,28], as we will discuss later.…”

Section: Compositional Effectsmentioning

confidence: 99%

“…Accordingly, most of the experimental features are naturally explained including the phenomenological laws used to interpret the median time to failure (MTF) and the existence of a threshold current for the onset of EM. Furthermore, most of the compositional effects (CE) acting during the early stages of EM in Al alloys [4], [24][25][26][27][28][29] are reproduced.…”

Section: Introductionmentioning

confidence: 99%

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A percolative approach to electromigration in metallic lines

Pennetta¹,

Reggiani²,

Trefán³

et al. 2001

J. Phys. D: Appl. Phys.

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We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network in the presence of degradation and recovery processes. The main features of experiments including Black's law, times to failure distribution, current threshold for the onset of electromigration, etc are properly reproduced. Compositional effects showing up in early resistance changes measured on Al-0.5%Cu and Al-1%Si lines are also studied.

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“…Here we present an extension of the previously proposed model [3] which allows us to reproduce most of the compositional effects (CE), often acting during the early stages of EM [4,5]. Typical examples of CE for Al-0.5%Cu lines under standard Median Time to Failure (MTF) measurements and for Al-1%Si lines under high resolution measurements made with the ratio of resistance (ROR) technique [6] will be reported in the next section and compared with the numerical results of the model.…”

Section: Introduction and Modelmentioning

confidence: 99%