2003
DOI: 10.1002/pssb.200303634
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Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si‐MOSFETs?

Abstract: We compare the temperature and in-plane magnetic field dependences of resistivity qðT; B k Þ of Si MOSFETs with the recent theories. In the comparison we use the effective mass m * and g * -factor determined independently. An anomalous increase of q with temperature, which has been considered a signature of the ''metallic" state, for high conductivities (s > e 2 =h) can be described quantitatively by the interaction effects in the ballistic regime. qðB k Þ is consistent with the theory only qualitatively; it i… Show more

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(1 citation statement)
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“…By contrast, for the low-mobility samples Si-40 and Si-46, ρ(T ) varies by ≈ 15% only and its variation occurs at much higher temperatures and densities [67]. These well known features have been explored and understood earlier [58,59,62,[66][67][68].…”
Section: High-and Low-mobility Samplesmentioning
confidence: 99%
“…By contrast, for the low-mobility samples Si-40 and Si-46, ρ(T ) varies by ≈ 15% only and its variation occurs at much higher temperatures and densities [67]. These well known features have been explored and understood earlier [58,59,62,[66][67][68].…”
Section: High-and Low-mobility Samplesmentioning
confidence: 99%