A crystalline silicon (c-Si) solar cell with a polycrystalline
silicon/SiO
x
(poly-Si/SiO
x
) structure, incorporating both electron and hole
contacts, is an attractive choice for achieving ideal carrier selectivity
and serving as a fundamental component in high-efficiency perovskite/Si
tandem and interdigitated back-contact solar cells. However, our understanding
of the carrier transport mechanism of hole contacts remains limited
owing to insufficient studies dedicated to its investigation. There
is also a lack of comparative studies on the poly-Si/SiO
x
electron and hole contacts for ideal carrier-selective
solar cells. Therefore, this study aims to address these knowledge
gaps by exploring the relationship among microstructural evolution,
dopant in-diffusion, and the resulting carrier transport mechanism
in both the electron and hole contacts of poly-Si/SiO
x
solar cells. Electron (n+ poly-Si/SiO
x
/substrate)- and hole (p+ poly-Si/SiO
x
/substrate)-selective passivating contacts
are subjected to thermal annealing. Changes in the passivation properties
and carrier transport mechanisms of these contacts are investigated
during thermal annealing at various temperatures. Notably, the results
demonstrate that the passivation properties and carrier transport
mechanisms are strongly influenced by the microstructural evolution
of the poly-Si/SiO
x
layer stack and dopant
in-diffusion. Furthermore, electron and hole contacts exhibit common
behaviors regarding microstructural evolution and dopant in-diffusion.
However, the hole contacts exhibit relatively inferior electrical
properties overall, mainly because both the SiO
x
interface and the p+ poly-Si are found to be highly
defective. Moreover, boron in the hole contacts diffuses deeper than
phosphorus in the electron contacts, resulting in deteriorated carrier
collection. The experimental results are also supported by device
simulation. Based on these findings, design rules are suggested for
both electron and hole contacts, such as using thicker SiO
x
and/or annealing the solar cell at a temperature
not exceeding the critical annealing temperature of the hole contacts.