Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Takahashi, Mitsue; Sakai, Shigeki

doi:10.3390/nano11010101

Cited by 11 publications

(14 citation statements)

References 71 publications

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“…There are several reasons for that, such as demanding integration of perovskite ferroelectrics on Si, large depolarization fields impairing data retention, and limited vertical and lateral device scaling. In fact, to achieve a reasonable memory window and low gate leakage, the perovskite ferroelectric layer has to be thicker than 100 nm [9,13].…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric field-effect transistors based on HfO₂: a review

Mulaosmanovic¹,

Breyer²,

Dünkel³

et al. 2021

Nanotechnology

208

116

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In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed. We also briefly survey recent developments in alternative applications for FeFETs including neuromorphic and in-memory computing as well as radiofrequency devices.

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Section: Introductionmentioning

confidence: 99%

Ferroelectric field-effect transistors based on HfO₂: a review

Mulaosmanovic¹,

Breyer²,

Dünkel³

et al. 2021

Nanotechnology

208

116

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“…Thus, numerous studies on high-performance ferroelectric materials have been subsequently conducted (Figure 3b). Layered perovskites, such as SBT, was discovered in the 1990s; [46] the crystal structures of these materials contain oxide layers between perovskite layers. Despite their fatigue-free properties, [7,[46][47][48][49] these materials do not overcome the non-CMOS compatibility of layered perovskites (due to complex crystal structure and process requirements), thereby hindering the development of high-density ferroelectric memory (Figure 3c,d).…”

Section: History Of Ferroelectric Memoriesmentioning

confidence: 99%

“…Layered perovskites, such as SBT, was discovered in the 1990s; [46] the crystal structures of these materials contain oxide layers between perovskite layers. Despite their fatigue-free properties, [7,[46][47][48][49] these materials do not overcome the non-CMOS compatibility of layered perovskites (due to complex crystal structure and process requirements), thereby hindering the development of high-density ferroelectric memory (Figure 3c,d). [10] Furthermore, nonvolatile ferroelectric transistors using SBT utilize a thick ferroelectric layer for a reasonable memory window.…”

Section: History Of Ferroelectric Memoriesmentioning

confidence: 99%

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Kim

Lee

2023

Advanced Materials

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Because a non-centrosymmetric crystal structure is mandatory for ferroelectric properties, very few materials are classified as ferroelectric. Historically, materials with complex crystal structures, such as BaTiO 3 (BTO), Pb[Zr x Ti 1−x ]O 3 (PZT), and Sr 2 Bi 2 TaO 9 (SBT), have been found to exhibit ferroelectricity. [5][6][7][8][9] Due to their spontaneous polarization, ferroelectric materials are diversely applied in memory devices, actuators, sensors, and energy storage. [1,2,[10][11][12][13] As the polarization state of ferroelectric materials can be regulated by an external electric field and the polarization is retained after the removal of the external electric field, such materials have the potential for applications involving high-performance non volatile memories. [9,14] However, some issues of conventional ferroelectric materials, such as high annealing temperatures, the requirement of noble electrode materials, and the diffusion of elements such as Pb complicate the integration of the previously reported ferroelectric materials into complementary metal-oxide semiconductors (CMOSs). [15][16][17][18] Furthermore, the large dielectric constants of perovskite-based ferroelectrics lead to high depolarization fields; [9,16] thus, the materials have short retention time and exhibit unstable polarization. [9] Additionally, the limited thickness scalability, complex etching process, and fatigue behaviors of perovskite-based ferroelectrics hinder the development of highly scaled ferroelectric devices. [9,18] Thus, semiconductor devices based on ferroelectric materials have limited commercial applications. Since the development of hafnia-based ferroelectrics, ferroelectric hafnia has attracted immense attention toward the development of semiconductor devices. [19][20][21] Compared to perovskite-based ferroelectric materials, hafnia-based ferroelectrics exhibit high scalability, and have high coercive electric fields (E c ) and low dielectric permittivity values, making them suitable for the fabrication of high-performance memory devices. [2,16,20,22] Additionally, hafnia is compatible with Si-based CMOS processes. Due to these advantages, hafnia-based ferroelectrics have been used in next-generation memory devices (such as ferroelectric capacitors, transistors, and tunnel junctions [FTJs]). [22][23][24][25][26] This paper reviews the recent findings and applications of hafnia-based ferroelectrics, highlighting the recent advances in ferroelectric transistors for next-generation memory and neuromorphic Ferroelectric materials have been intensively investigated for highperformance nonvolatile memory devices in the past decades, owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than conventional memory devices. However, non-complementary metal-oxidesemiconductor (CMOS) compatibility and degradation due to fatigue of traditional perovskite-based ferroelectric materials have hindered the development of high-density...

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“…Ferroelectric materials can realize the modulation of the conductivity of the semiconductor layer under the action of the electric field. Typical ferroelectric materials include perovskites, 34 HfO 2 , 35 BaTiO 3 , 36 PbZrTiO 3 (PZT), 37 SBT, 38 and so on. Perovskites and HfO 2 are difficult to handle by solution process.…”

mentioning

confidence: 99%

Ferroelectric Polarized in Transistor Channel Polarity Modulation for Reward-Modulated Spike-Time-Dependent Plasticity Application

Sun

Yuan

et al. 2022

J. Phys. Chem. Lett.

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Reward signals reflect the developmental tendency of reinforcement learning (RL) agents. Reward-modulated spike-time-dependent plasticity (R-STDP) is an efficient and concise information processing feature in RL. However, the physical construction of R-STDP normally demands complex circuit design engineering, resulting in large power consumption and large area. In this work, we studied the role of ferroelectric polarization in the modulation of carbon nanotube transistor channel polarity. Furthermore, we applied a modulating channel method to construct a 2T synaptic component by spin-coating technology. Based on the nonvolatility of ferroelectric polarization, the synaptic component constructed has the characteristics of reconfigurable polarity. One channel could be modulated to n-type and the other to p-type. One modulated channel was used to perform the STDP function when the reward signal arrived, and the other modulated channel was used to perform the anti-STDP function when the punishment signal arrived. Finally, R-STDP learning rules are implemented on hardware. This work provides a strategy for hardware construction of RL.

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Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Cited by 11 publications

References 71 publications

Ferroelectric field-effect transistors based on HfO₂: a review

Ferroelectric field-effect transistors based on HfO₂: a review

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Ferroelectric Polarized in Transistor Channel Polarity Modulation for Reward-Modulated Spike-Time-Dependent Plasticity Application

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Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Cited by 11 publications

References 71 publications

Ferroelectric field-effect transistors based on HfO2: a review

Ferroelectric field-effect transistors based on HfO2: a review

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Ferroelectric Polarized in Transistor Channel Polarity Modulation for Reward-Modulated Spike-Time-Dependent Plasticity Application

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Product

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Ferroelectric field-effect transistors based on HfO₂: a review

Ferroelectric field-effect transistors based on HfO₂: a review