Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru

Bobb-Semple, Dara; Nardi, Katie Lynn; Draeger, Nerissa; Hausmann, Dennis M.; Bent, Stacey F.

doi:10.1021/acs.chemmater.8b04926

Cited by 144 publications

(188 citation statements)

References 67 publications

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“…Areas on the surface of the substrate can be activated using a catalytic reactant, electrons, or ion bombardment [89][90][91], allowing film growth only on the activated areas but not on the non-activated ones. Areas on the surface of the substrate can also be passivated using polymer films or self-assembled monolayers of organic molecules (SAMs) [92][93][94], which are often used to block areas of the surface where film growth is undesired. selectively adsorbed on the non-growth areas to block film growth on these areas.…”

Section: Area Selective Cvdmentioning

confidence: 99%

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Nadhom

2021

Linköping Studies in Science and Technology. Dissertations

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Metallic films are used to improve optical, chemical, mechanical, magnetic, and electrical properties and are therefore of high importance in many applications, from electronics and catalysis, environmental protection and health, to wearable and flexible electronic materials.Many of these applications, however, require that the metal films are deposited uniformly on topographically complex surfaces and structures. Some form of chemical vapor deposition (CVD) where the deposition is governed by the surface chemistry is needed for uniform film deposition on topographically complex surfaces. Furthermore, area selective deposition (ASD) has gained large considerations lately, where films deposited only on specified areas of the substrate, and not on others, simplifies the processing significantly and opens the way for less complex fabrication of, for instance, nanoscaled electronics. ASD occurs when the surface chemical reactions are disabled on selected areas of the substrate. Since the metal centers in CVD precursor molecules typically have a positive valence, a reductive surface chemistry is required to form a metallic film. This is usually done by using a second precursor, i.e., a molecular reducing agent. The negative standard reduction potential of the first-row transition metals (Ti, V, Cr, Mn, Fe, Co, and Ni) means that CVD of these metals requires either very high temperatures or very powerful molecular reducing agents. This thesis describes a new low X XI List of Articles

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Section: Area Selective Cvdmentioning

confidence: 99%

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Nadhom

2021

Linköping Studies in Science and Technology. Dissertations

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“…Lithography is then performed on the blocking layer to obtain the desired pattern with growth and non-growth areas. The blocking layers are often self-assembly monolayers (SAMs) [139,140]. One challenge with using SAMs is that they may not be compatible with energetic co-reactants like ozone [141].…”

Section: Area-selective Atomic Layer Depositionmentioning

confidence: 99%

Area-selective atomic layer deposition of molybdenum oxide

Kvalvik

Borgersen

Hansen

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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have supervised the work.Per-Anders and Ola, there is no way this thesis could be finished without you. Per-Anders, you are truly an excited person and I have never met anyone so passionate about his or her own field as you. That passion is contagious, and so is your cheerfulness and joy to share your knowledge. Ola, you are the most understanding and supporting person on the planet. Your response time is amazingly fast and you take all stupid and not so stupid questions seriously. You see every find as an opportunity, and that is great. When I saw an ALD system not behaving, only depositing on certain surfaces, you saw the chance to explore an area-selective system. I am so deeply grateful to both of you.I am also very grateful to Øystein Evandt and his insight on Design of Experiments (DoE), that he is always more than willing to share. Moreover, a special thank you goes to Dr. David Wragg for his aid with Pawley refinements and to my co-author on Paper I, Jon Borgersen. Making the world's second smallest university logo would not have been possible without you. Augustinas Galeckas, co-author on Paper III, has my sincere gratitude for a swift response and aiding with various optical measurements.Thank you all.During my many years at NAFUMA I have had a lot of nice colleagues and even shared office with many of you. I have probably been of the more talkative kind of office mate, but I think most of you managed ok. Thanks for making work-life good. Special thanks go to Kristian x2, Leva, Michael and Katja, for particularly good company.The largest thank you goes to the people surrounding me. Luckily, that is a lot of people and I am so blessed to have each and every one of you. I am looking forward to times where we can all gather up for large family dinners again, although fitting 25+ people in our house is kind-of tight. Special thanks go to my parents for their endless support and babysitting. You have thought me persistence, perfectionism and hard work, and always taken for granted that I would be able to reach my goals.Thanks for having that belief, also at times where I lost it myself. A huge thank you goes to my in-laws for cheering and babysitting, including my always calm, positive and caring sister-in-law. I also want to thank the engineers in my family, particularly my grandfather, for inspiring me towards a scientific career. Kaja also deserves a huge thank you, simply for existing. Thanks for being my best friend since we started schooland staying with me until now when I finally finish my formal education.Many times during this process, I have been told that pursuing a PhD whilst having three kids, is something you just don't do. It pisses of my inner feminist, but they do have a point, combining sleepless iv nights, dreadful pregnancies and having to make it home before the kindergarten closes whilst pursuing a phd, is not always a primrose path. My favorite counterargument for this is that children give you the best possible mental timeouts from your work. And trust me, in this process, you need m...

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“…The selective deposition is quite complicated and relies on the coupled parameters, including substrates, precursors, temperature, pressure and aspect ratio dependency. Prior reports showed that the selectivity could be obtained by chemical modification, including surface passivation with polymers, self-assembled monolayers (SAMs), inhibitors and so on [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

Cao

Lan

et al. 2021

Molecules

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Manganese oxide (MnOx) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnOx films can be used in some key steps of nanomanufacturing. In this work, MnOx films are deposited on Pt, Cu and SiO2 substrates using Mn(EtCp)2 and H2O over a temperature range of 80–215 °C. Inherently area-selective atomic layer deposition (ALD) of MnOx is successfully achieved on metal/SiO2 patterns. The selectivity improves with increasing deposition temperature within the ALD window. Moreover, it is demonstrated that with the decrease of electronegativity differences between M (M = Si, Cu and Pt) and O, the chemisorption energy barrier decreases, which affects the initial nucleation rate. The inherent ASD aroused by the electronegativity differences shows a possible method for further development and prediction of ASD processes.

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Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru

Cited by 144 publications

References 67 publications

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Area-selective atomic layer deposition of molybdenum oxide

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

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