Area‐Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation

Abstract

Area‐selective atomic layer deposition (ALD) is a promising “bottom‐up” alternative to current nanopatterning techniques. While it has been successfully implemented in traditional microelectronic processes, selective nucleation of ALD on 2D materials has so far remained an unsolved challenge. In this article, a precise control of the selective deposition of ZnO on graphene at low temperatures (<250 °C) is demonstrated. Maskless femtosecond laser writing is used to locally activate predefined surface areas (down to 300 nm) by functionalizing graphene to achieve excellent ALD selectivity (up to 100%) in these regions for 6‐nm‐thick ZnO films. The intrinsic conductive properties of graphene can be restored by thermal annealing at low temperature (300 °C) without destroying the deposited ZnO patterns. As the graphene layer can be transferred onto other material surfaces, the present patterning technique opens new attractive ways for various applications in which the functionalized graphene is utilized as a template layer for selective deposition of desired materials.

Laser-induced tuning of graphene field-effect transistors for pH sensing

“…The pulse energies ranged from 1 to 4 nJ and the irradiation time was 0.1 s spot −1 . 27 (= dosage range 0.1–1.6 nJ 2 s, see ESI† for details) As the achieved oxidation level with 2PO depends on many variables, not just the irradiation dose, Raman spectroscopy was used to determine the oxidation level. Raman spectra were measured using a DXR Raman Microscope (Thermo Scientific) with a 50x objective, laser excitation of 532 nm and power of 1 mW before and after oxidation to determine the level of oxidation achieved.…”

Synergistic Combination of Reductive Covalent Functionalization and Atomic Layer Deposition—Towards Spatially Defined Graphene‐Organic‐Inorganic Heterostructures

“…The observation of ZnO domains in the unfunctionalized ribbon regions can rationally be attributed to the H 2 O precursor (inevitably physically adsorbed on the graphene surface) used in the ALD process. [25] To prevent the contamination of clean graphene surface from side reaction contaminations, we kept the PMMA mask present on the 2D-patterned G h as a protective layer during all subsequent ALD growth steps, as this physically coated PMMA layer can easily be washed off after the finalization of the functional layer growth in the third dimension.…”

Catalytic Activity of Horseradish Peroxidase Immobilized on Pristine and Two‐Photon Oxidized Graphene

“…The laser parameters for the 2PO of graphene used in this work were optimized (to achieve the highest ID/IG ratio) as reported previously. [19,20] The oxidation was verified by Raman spectroscopy (Figure S1, Supporting Information).…”