Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy

Yoshiba, Ippei; Iwai, Takayuki; Uehara, Takahiro; Horíkoshi, Yoshiji

doi:10.1016/j.jcrysgro.2006.11.042

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…As a standard mask material for SAG, SiO 2 is conventionally employed, because it has high thermal stability. 5) One of the finest lithographic tools to pattern the oxide is electron-beam direct writing (EBDW), which provides high resolution on a nanometer scale. 6) In a conventional EBDW, a SiO 2 layer is coated with an organic resist such as a poly(methyl methacrylate) (PMMA) to transfer the EBpatterned form into the oxide layer.…”

Section: Introductionmentioning

confidence: 99%

A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing

Matsuda

Ushio

Hirokawa

et al. 2011

Jpn. J. Appl. Phys.

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A simple process of 1-keV-range low-energy electron-beam direct writing (LE-EBDW) is proposed for a direct pattern of a thermally stable oxide layer on a Si substrate. An ultrathin multilayered structure is used as a highly sensitive inorganic negative resist for LE-EBDW, and it consists of an amorphous GaAs layer of 3 nm thick and its surface oxide. The EB-irradiated area is transformed into a thermally stable oxide pattern by heating the substrate to 750 C in a vacuum after LE-EBDW. The heating process induces removal of the multilayered structure, while the oxide pattern can remain on the substrate. The remaining pattern can directly act as an ultrathin template for successive selective area growth on the Si substrate. It is assumed that the pattern is composed of thermally stable oxides such as SiO 2 and Ga 2 O 3 formed below the amorphous layer, not the surface oxide, of the multilayered structure. #

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Section: Introductionmentioning

confidence: 99%

A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing

Matsuda

Ushio

Hirokawa

et al. 2011

Jpn. J. Appl. Phys.

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“…Although SAG using a AlGaAs native oxide mask with high Al concentration (60%) has been reported by Yoshida et al, the change in faceting as a function of the Al concentration was not investigated. 7) In our experiment, the AlGaAs oxides are patterned by a simple method: low-energy electron-beam lithography (LE-EBL) without an organic resist. A previous study has shown that GaAs native oxide acts as a highly sensitive inorganic negative resist for LE-EBL and the EBirradiated area serves as a thermally stable oxide mask for successive SAG; this method is called MBE-Litho.…”

mentioning

confidence: 99%

Effect of Al Concentration in AlGaAs Oxide Mask Pattern on Faceting Kinetics during Selective Area Growth of GaAs by Molecular Beam Epitaxy

Matsuda¹,

Hayashi²,

Ushio³

et al. 2011

Appl. Phys. Express

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An oxidized AlGaAs layer is used as an inorganic negative resist for low-energy electron-beam lithography. The patterned oxide can function as an ultrathin template for selectively growing GaAs mesa structures having side facets vertical to a GaAs(001) substrate by molecular beam epitaxy. With increase in the Al concentration in the oxide, the geometric shape of the structures with lateral growth on the oxide surface changes from triangular to pentagonal. This change is explained by a minimization effect of the total surface energy of the structure, including the interfacial energy between the lateral growth region and the patterned oxide mask.

show abstract

A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing

Matsuda

Ushio

Hirokawa

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy

Cited by 3 publications

References 13 publications

A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing

A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing

Effect of Al Concentration in AlGaAs Oxide Mask Pattern on Faceting Kinetics during Selective Area Growth of GaAs by Molecular Beam Epitaxy

A Highly Sensitive Inorganic Resist for Directly Fabricating Thermally Stable Oxide Pattern on Si Substrate by Low-Energy Electron-Beam Direct Writing

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