ArF-excimer-laser-induced emission and absorption bands in fused silica synthesized under oxidizing conditions

Kuzuu, Nobu; Komatsu, Yoshikazu; Murahara, Masataka

doi:10.1103/physrevb.45.2050

Cited by 38 publications

(11 citation statements)

References 19 publications

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“…The origin of the peak is considered to be the oxygen deficient defect center in the SiO 2 film. 19 The 2.2-eV peak from the SiO 2 matrix is also observed for the samples with small d ave (d ave р1.7 nm). In the present samples, the size of nc-Ge is controlled by changing f Ge .…”

Section: B Photoluminescence Spectramentioning

confidence: 88%

Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded inSiO2matrices

et al. 1998

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We have succeeded in observing the size dependent photoluminescence ͑PL͒ from Ge nanocrystals ͑nc-Ge͒ with 0.9-5.3 nm in average diameter (d ave) in the near-infrared region. The nc-Ge were fabricated by rf cosputtering of Ge and SiO 2 and post annealing at 800°C. It was found that the sample with d ave ϭ5.3 nm shows a PL peak at about 0.88 eV. With decreasing the size, the PL peak shifted to higher energies and reached 1.54 eV for the sample with d ave ϭ0.9 nm. It was also found that the PL intensity increases drastically with decreasing the size. The observed strong size dependence of the PL spectra indicates that the observed PL originates from the recombination of electron-hole pairs confined in nc-Ge. ͓S0163-1829͑98͒09535-6͔

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Section: B Photoluminescence Spectramentioning

confidence: 88%

Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded inSiO2matrices

et al. 1998

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“…In the previous articles on x-ray and ArF-laserinduced absorption in type-III silicas, we assumed that the 4.8 eV band was due to interstitial ozone. [7][8][9][10] In these articles, the 4.8 eV band is only apparent in samples synthesized under oxidizing conditions; 7,8,10 oxygen molecules could dissolve in the glass network during the glass formation process because an excess amount of oxygen molecules exists in the flame used for the hydrolysis. The intensities of the main origin of the 4.8 eV band in fused silicas produced under reducing conditions are not so strong.…”

Section: A Origin Of the Absorption Componentsmentioning

confidence: 99%

“…7 Characteristics of these absorption bands were discussed based on a model proposed for describing ArF excimer laser-induced absorption in the same kinds of SFS. 9,10 Kuzuu also studied OH content dependence of the x-ray induced absorption of type-III fused silica synthesized under reducing conditions. 11 The absorption spectra were reproduced by fitting five Gaussian absorption bands, at 4.8, 5.0, 5.4, 5.8, and 6.5 eV, respectively, and the origin of the OH content dependence was discussed.…”

Section: Introductionmentioning

confidence: 99%

X-ray induced absorption in fused silica containing various amounts of OH

Kuzuu

Horikoshi

2005

Journal of Applied Physics

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Characteristics of x-ray-induced absorption spectra in various types of synthetic fused silica ͑SFS͒ containing 0.1-77ϫ 10 18 cm −3 of OH were studied up to an irradiation time of 6 h. Induced absorption in the SFS spectra of irradiation with x ray from a Rh target with a dosage of 2 ϫ 10 4 C kg −1 h −1 was reproduced by six Gaussian absorption bands, at 3.8, 4.8, 5.0, 5.4, 5.8, and 6.5 eV, respectively. Intensities of these absorption bands increased with power of irradiation time. The intensities of the 5.8, 5.4, and 5.0 eV bands decreased with increasing OH content at an irradiation time shorter than 2 h. At an irradiation time longer than 2 h, on the other hand, the intensities of each absorption band had a minimum at an OH content of Ϸ5 ϫ 10 18 cm −3

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“…This process has been proposed to explain the effect of heat treatment on ArF-excimer-laser-induced absorption in synthetic fused silica. 34 In fact, H 2 O molecules and hydrogenbonded ϵSi-OH decreased after heat treatment, as seen in Fig. 9.…”

Section: ͑17͒mentioning

confidence: 74%

Effects of heat treatment on absorption bands in OH-free and OH-containing fused quartz

Kuzuu¹,

Horikoshi²,

Nishimura³

et al. 2003

Journal of Applied Physics

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Effects of heat treatment on absorption bands in fused quartz produced by melting natural quartz powder containing 2ϫ10 17 cm Ϫ3 ͑sample I͒ and 1.3ϫ10 19 cm Ϫ3 of OH ͑sample II͒ were studied. Both samples have an absorption peak at Ϸ5.2 eV. Fluorescent spectra and the results of Gaussian peak decomposition suggest that this absorption is associated with the B 2 ␤ band with a peak at 5.15 eV and full width at half maximum of 0.42 eV. The 5.15 eV band and an absorption component at 7.5 eV in sample II were annealed out at 1423 K, whereas almost no change was observed in the absorption spectra of sample I. The decrement of the 5.15 and 7.5 eV bands was proportional to the decrement of the OH content. The annealing mechanism in sample II can be explained using a previously proposed model for OH-containing fused quartz wherein the B 2 ␤ band is the twofold-oxygen-coordinated silicon ͑ϭSi:͒ coordinated with two ϵSi-OH structures. Sample I must have a ϭSi: structure, but it may not be annealed out because it does not have sufficient OH to form the twofold-coordinated ϵSi-OH on ϭSi:. The origin of the other absorption bands was also discussed.

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ArF-excimer-laser-induced emission and absorption bands in fused silica synthesized under oxidizing conditions

Cited by 38 publications

References 19 publications

Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded inSiO2matrices

Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded inSiO2matrices

X-ray induced absorption in fused silica containing various amounts of OH

Effects of heat treatment on absorption bands in OH-free and OH-containing fused quartz

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