2012
DOI: 10.1051/epjap/2012120173
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Argon gas concentration effects on nanostructured molybdenum nitride layer growth using 100 Hz pulsed dc glow discharge

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Cited by 9 publications
(8 citation statements)
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“…Thus nitridation, nucleation of silicon nitride and its growth change the surface roughness even with increasing argon contents (sputtering rate). Moreover, the smoothing and roughening of surface layers depend on several factors such as coalescence, crystallite size, residual stresses, layer thickness, etc., resulting from the interaction of energetic nitrogen-argon plasma [26]. From the above results it is concluded that the surface properties of silicon nitride films can be controlled just by controlling the argon contents in nitrogen-argon plasma.…”
Section: Sem Analysismentioning
confidence: 73%
“…Thus nitridation, nucleation of silicon nitride and its growth change the surface roughness even with increasing argon contents (sputtering rate). Moreover, the smoothing and roughening of surface layers depend on several factors such as coalescence, crystallite size, residual stresses, layer thickness, etc., resulting from the interaction of energetic nitrogen-argon plasma [26]. From the above results it is concluded that the surface properties of silicon nitride films can be controlled just by controlling the argon contents in nitrogen-argon plasma.…”
Section: Sem Analysismentioning
confidence: 73%
“…Finally, the samples are cleaned in ultrasonic bath and then cleaned with acetone. [18] X-ray diffraction (XRD) patterns are obtained by an X'Pert PRO MPD θ -2θ X-ray diffractometer operated at a voltage of 40 kV and current of 40 mA and using CuK α (λ = 1.5406) Å radiation. The surface morphology of the nitrided specimens are investigated with a (HITACHI S-3400 N) scanning electron microscope.…”
Section: Methodsmentioning
confidence: 99%
“…The ablated Zr atoms chemically react with atoms of the surrounding gas (oxygen/hydrogen) and redeposit on the target surface after the formation of oxides and hydrides. Formation of theses oxides and hydrides is attributable for the decrease in crystallite size [22]. The possible defect production and growth of residual stresses might also be considered to be other reasons for decrease in the crystallite size [22].…”
Section: Laser Ablation -From Fundamentals To Applicationsmentioning
confidence: 99%
“…Formation of theses oxides and hydrides is attributable for the decrease in crystallite size [22]. The possible defect production and growth of residual stresses might also be considered to be other reasons for decrease in the crystallite size [22]. An increase in stacking faults and structural disorder owing to the diffusion of hydrogen/oxygen widens the XRD peaks [23].…”
Section: Laser Ablation -From Fundamentals To Applicationsmentioning
confidence: 99%