Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity

Effect of Assisted-Ion-Beam Gases on the Structure of Amorphous Silicon Thin Films Prepared by Ion-Beam-Assisted Sputtering

“…Following with the increased of Si-H bonds resulted in the more ordered network structure and lower defect density in the a-Si thin films. In addition, the formation of Si-H bonds could cause the surface morphology and surface evolution of a-Si was significantly changed [11][12][13][14][15].…”

“…The roughness of the a-Si thin films deposited with Ar-H 2 (8%)-ion beam and H-ion beam were 0.54 nm and 0.75 nm. It was indicated that the roughness of the a-Si thin films increased with the increase of hydrogen concentration in the assisted-ion-beam gases, which due to the formation of Si-H bonds [10][11][12].…”

“…It was observed that the increased of Eg with the introduction of assisted-ion beam and increased of hydrogen concentration in the assisted-ion beam gases. It was probably due to the higher structure order and lower the defect density of a-Si thin films [10,11,17].…”

“…Huang et al reported that the effect of H-ion energy on structure of a-Si thin films [10]. Wang et al reported that the effect of H-ion energy on the structural and electrical properties of boron-doped a-Si thin films [11]. They found that a-Si thin films with moderate H-ion energy possessed best structural and electrical properties, respectively.…”

Ion-beam-induced bending of semiconductor nanowires

“…Whilst the consequences of ion irradiation are well understood in bulk semiconductors [21,22,27,37], investigations are required to understand the differences in the NWs case and thus develop the tools required for modification of their properties (structural, mechanical and electronic) and incorporation into nanoscale devices for achieving desired functions and applications such as nanowire-based field effect transistors [38]. The effects of ion beams can be both desirable and deleterious, depending on the application, with effects including the sputtering of material [39,40], implantation of intrinsic and extrinsic atoms [41][42][43][44][45] and crystallographic damage ranging from point defects [29,[46][47][48][49] to complete amorphization [50][51][52][53][54][55][56][57].…”