Argon ion-induced dissociation of acetylene in an expanding Ar/C2H2 plasma

Graaf, de A Ariël; Hest, van Mfam Maikel; Sanden, van de Mcm Richard; Letourneur, Kgy Karine; Schram, DC Daan

doi:10.1063/1.123968

Cited by 37 publications

(31 citation statements)

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“…A comparative study shows C 2 H 2 as a better candidate over CH 4 and C 6 H 6 , which reveals that chemistry plays an important role during deposition even under such conditions. 4,[17][18][19][20] Studies dedicated to reaction mechanism involved in such plasmas have been taken up by our group at several occasions. 1 Depositing a-C:H films at high growth rates without compromising the material quality has been a scientific and technological challenge, where the expanding thermal plasma chemical vapor deposition ͑ETP-CVD͒ has emerged as a promising technique.…”

Section: Introductionmentioning

confidence: 99%

Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

Singh

Zaharia

Creatore

et al. 2010

Journal of Applied Physics

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Articles you may be interested inInfluence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition A hard graphitelike hydrogenated amorphous carbon grown at high deposition rate ( > 15 nm ∕ s ) Appl. Phys. Lett. 92, 221502 (2008); 10.1063/1.2938056 Electron cyclotron resonance deposition, structure, and properties of oxygen incorporated hydrogenated diamondlike amorphous carbon films J. Appl. Phys. 96, 5456 (2004); 10.1063/1.1804624 Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH 3 CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH (A 2 Δ) and CN (B 2 Σ + ) states J.

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Section: Introductionmentioning

confidence: 99%

Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

Singh

Zaharia

Creatore

et al. 2010

Journal of Applied Physics

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“…These films were obtained by means of the Ar-fed expanding thermal plasma (ETP) technique, a remote plasma where the electron temperature drops to about 0.3 eV [14] in the downstream region, and the plasma chemistry is dominantly controlled by charge exchange reactions between Ar + and precursor molecules, followed by dissociative recombination of the molecular ions with lowenergy electrons [15,16]. The deposited films showed a k value as low as 2.8 (measured at 1 MHz), and hardness and Young's modulus values of 0.9 GPa and 7.1 GPa, respectively.…”

Section: Introductionmentioning

confidence: 99%

Optical and chemical characterization of expanding thermal plasma-deposited carbon-containing silicon dioxide-like films

Creatore¹,

Rieter²,

Barrell³

et al. 2008

Thin Solid Films

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“…The combination of mass spectrometry and Langmuir probe measurements revealed the dominance of the argon ion induced dissociation of injected acetylene. 17 The proposed mechanism for the plasma chemistry starts with a charge transfer reaction between an argon ion and an acetylene molecule 18 Ar ϩ ϩC 2 H 2 →ArϩC 2 H 2 ϩ, *…”

Section: Introductionmentioning

confidence: 99%

Role of carbon atoms in the remote plasma deposition of hydrogenated amorphous carbon

Benedikt

Wisse

Woen

et al. 2003

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The aim of this article is to determine the role of carbon atoms in the growth of hydrogenated amorphous carbon (a-C:H) films by means of an argon/acetylene expanding thermal plasma. Cavity ring down absorption spectroscopy is used to detect metastable carbon atoms by probing the 1s 2 2s 2 2p 3s 1 P 1 ←1s 2 2s 2 2p 2 1 S 0 electronic transition. In addition to absorption measurements, the emission of the same transition is monitored by means of optical emission spectroscopy. These two measurements provide information about the local production of the C atoms and about their reactivity in the gas phase. It will be shown that under growth conditions in an Ar/C 2 H 2 expanding thermal plasma, the metastable carbon density is also representative for the ground state carbon density. From obtained results it is concluded that the carbon atoms react rapidly with acetylene in the gas phase and therefore their contribution to the growth of hard diamond-like a-C:H films can be neglected. Only at low acetylene flows, the condition when soft polymer-like films are deposited, carbon atoms are detected close to the substrate and can possibly contribute to the film growth.

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Argon ion-induced dissociation of acetylene in an expanding Ar/C2H2 plasma

Cited by 37 publications

References 11 publications

Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

Optical and chemical characterization of expanding thermal plasma-deposited carbon-containing silicon dioxide-like films

Role of carbon atoms in the remote plasma deposition of hydrogenated amorphous carbon

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