Arkady Aronov

Altshuler, B. L.; Khmelnitskii, D. E.

doi:10.1063/1.2807954

Cited by 87 publications

(187 citation statements)

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“…However, this decrease can not cause any dramatic changes in the WL observation, because the WL correction in 3D case depends on the relaxation time as √ τ . 6,7 We believe that to understand the role of Pb doping, it is important to take into account that the neutral Pb atoms interact with electrons by short-range potentials, like strongly screened ionized impurities in metals. Large number of such defects creates necessary conditions for diffusive motion of electrons, which results in the WL effect.…”

Section: Interpretation Of Electrical Properties Of Insb Films Amentioning

confidence: 99%

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Weak localization in InSb thin films heavily doped with lead

2002

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The paper reports on the investigations of the weak localization (WL) effects in 3D (about 2 µm thick) polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n > 10 16 cm −3 at the total concentration of the donor and acceptor type structural defects Nt > 10 18 cm −3 . Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10 18 cm −3 leads to pronounced WL effects below 7 K. In particular, a clearly manifested spin-orbit (SO) scattering is observed. That is ascribed to the large mass of the Pb atoms. From the comparison of the experimental data on temperature dependence of the magnetoresistivity (MR) and sample resistance with the WL theory, the temperature dependence of the phase destroying time τϕ is determined. The determination is performed by fitting theoretical terms obtained from Kawabata's theory to experimental data on magnetoresistance. It is concluded that the dephasing process is connected to three separate interaction processes. The first is due to the SO scatterings and is characterized by temperature-independent relaxation time τso ≃ 10 −12 s. The second is associated with the electronphonon interaction (τi ∼ T −3 ). The third dephasing process is characterized by independent on temperature relaxation time τc = (1 to 7) × 10 −12 s. This relaxation time is tentatively ascribed to inelastic scattering at extended structural defects, like grain boundaries. The resulting time τϕ shows saturation in its temperature dependence for T → 0. The temperature dependence of the resistance of the InSb films can be explained by the electron-electron interaction for T < 1 K, and by the WL effect for T > 2 K. PACS numbers73.20.Fz; 72.15.Rn; 72.10.Fk.

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Section: Interpretation Of Electrical Properties Of Insb Films Amentioning

confidence: 99%

“…For the interpretation of our experimental results we had to complete the commonly accepted formulae for the WL corrections [6][7][8] to take into account the specific features of InSb. They are a strong SO interaction and a strong Zeeman splitting of spin up and down electrons in magnetic field (Landé factor for InSb is g = −51.3).…”

Section: Introductionmentioning

confidence: 99%

Weak localization in InSb thin films heavily doped with lead

2002

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“…In phase-coherent (mesoscopic) devices there are quantum interference effects in electron transport such as the weak localization correction to the conductance and universal conductance fluctuations which can in principle be used to detect radiation since it suppresses these effects [2,3,4]. In practice the suppression of coherent transport by EM fields is difficult to separate from the suppression by intrinsic interactions due to the electron-electron and electron-phonon couplings.…”

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confidence: 99%

“…We analyze in detail the case of a chaotic quantum dot at temperature T e in contact with a thermal EM field at temperature T f , calculating the RMS size of the PV current as a function of the temperature difference, finding an effect ∼ pA. 72.15.Eb, 73.63.Kv Many quantum electronic devices for applications in metrology and quantum information technology involve the interaction of electrons with high frequency electromagnetic (EM) fields, often the quantum devices act as detectors of this radiation [1]. In phase-coherent (mesoscopic) devices there are quantum interference effects in electron transport such as the weak localization correction to the conductance and universal conductance fluctuations which can in principle be used to detect radiation since it suppresses these effects [2,3,4]. In practice the suppression of coherent transport by EM fields is difficult to separate from the suppression by intrinsic interactions due to the electron-electron and electron-phonon couplings.…”

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confidence: 99%

Photovoltaic Current Response of Mesoscopic Conductors to Quantized Cavity Modes

Vavilov

Stone

2006

Phys. Rev. Lett.

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We extend the analysis of the effects of electromagnetic (EM) fields on mesoscopic conductors to include the effects of field quantization, motivated by recent experiments on circuit QED. We show that in general there is a photovoltaic (PV) current induced by quantized cavity modes at zero bias across the conductor. This current depends on the average photon occupation number and vanishes identically when it is equal to the average number of thermal electron-hole pairs. We analyze in detail the case of a chaotic quantum dot at temperature T e in contact with a thermal EM field at temperature T f , calculating the RMS size of the PV current as a function of the temperature difference, finding an effect ∼ pA. 72.15.Eb, 73.63.Kv Many quantum electronic devices for applications in metrology and quantum information technology involve the interaction of electrons with high frequency electromagnetic (EM) fields, often the quantum devices act as detectors of this radiation [1]. In phase-coherent (mesoscopic) devices there are quantum interference effects in electron transport such as the weak localization correction to the conductance and universal conductance fluctuations which can in principle be used to detect radiation since it suppresses these effects [2,3,4]. In practice the suppression of coherent transport by EM fields is difficult to separate from the suppression by intrinsic interactions due to the electron-electron and electron-phonon couplings.A more reliable mean of using mesoscopic conductors to detect EM radiation is to look at the DC current induced by such a field at zero voltage and temperature bias across the device, known as the mesoscopic photovoltaic (PV) effect [5,6,7,8]. This effect arises in mesoscopic conductors because the phase-coherent transmission through the device almost always violates parity symmetry and the nonequilibrium distribution created by the EM field sets up a steady-state current dictated by this parity violation. When the parity violation is due to random interference, the sign of this current will fluctuate from sample to sample and its rootmean-square (RMS) size in this case depends on the power in the EM field [5,6,8,9,10,11]. Hence after this PV current is calibrated it can be used for detection of the power in the incident EM field.The previous theoretical description [5,6,9,10,11,12] of the PV current has employed a classical treatment of the EM fields, since this description was sufficient for the systems studied experimentally [7,8,13,14,15]. In this case the RMS PV current is a monotonically increasing function of the EM field power. Recently a new generation of electronic circuits was developed [16], where a quantum electronic device is coupled to an EM field of a high quality electromagnetic resonator. If the resonator contains a small number of photons of the EM field and the lifetime of the photons is long, the interaction of the EM field with electrons requires a full quantum treatment, based on the laws of quantum electrodynamics, leading to a new sub-field...

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“…Thus the charge relaxation resistance determines, together with the electrochemical and geometrical capacitance, the fluctuations of the charge, the potential and the current induced into the gate. Since dephasing rates can be linked to the low frequency limit of the potential fluctuations [18] the resistances R q and R v also determine the dephasing rate in Coulomb coupled mesoscopic conductors [15].…”

Section: Equilibrium and Non-equilibrium Charge Relaxation Resistancementioning

confidence: 99%

Shot Noise Induced Charge and Potential Fluctuations of Edge States in Proximity of a Gate

Büttiker

Statistical and Dynamical Aspects of Mesoscopic Systems

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Abstract. We evaluate the RC-time of edge states capacitively coupled to a gate located away from a QPC which allows for partial transmission of an edge channel. At long times or low frequencies the RC-time governs the relaxation of charge and current and governs the fluctuations of the equilibrium electrostatic potential. The RC-time in mesoscopic structures is determined by an electrochemical capacitance which depends on the density of states of the edge states and a charge relaxation resistance. In the nonequilibrium case, in the presence of transport, the shot noise leads to charge fluctuations in proximity of the gate which are again determined by the equilibrium electrochemical capacitance but with a novel resistance. The case of multiple edge states is discussed and the effect of a dephasing voltage probe on these resistances is investigated. The potential fluctuations characterized by these capacitances and resistances are of interest since they determine the dephasing rate in Coulomb coupled mesoscopic conductors.

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Arkady Aronov

Cited by 87 publications

References 0 publications

Weak localization in InSb thin films heavily doped with lead

Weak localization in InSb thin films heavily doped with lead

Photovoltaic Current Response of Mesoscopic Conductors to Quantized Cavity Modes

Shot Noise Induced Charge and Potential Fluctuations of Edge States in Proximity of a Gate

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