Aromatic substituents for prohibiting side-chain packing and π-π stacking in tin-cored tetrahedral stilbenoids

Kim, Cheol-Min; Yoon, Min-Ju; Hong, Seok Hee; Park, Minjoon; Park, Kwangyong; Kim, Soo Young

doi:10.1007/s13391-016-6002-8

Cited by 7 publications

(3 citation statements)

References 31 publications

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“…1G and H, there is a strong hydrogen bonding effect and π–π stacking interaction when the PHAzoMA 59 homopolymer self-assembles into nanobowls. The shift of the absorption peak of –OH to a lower wavenumber (from 3406 to 3347 cm –1 ) along with the expanding and strengthening of –OH absorbance in the FT-IR spectrum after self-assembly indicates the formation of hydrogen bonds,32 while the red shift of the absorption peak of the azobenzene group (from 397 to 471 nm) in the UV-vis spectrum confirms the existence of π–π stacking interaction 44. The detailed influence of the non-covalent interactions on the formation of nanobowls will be discussed later in this paper.…”

Section: Resultsmentioning

confidence: 84%

Nanobowls with controlled openings and interior holes driven by the synergy of hydrogen bonding and π–π interaction

Sun

Liu

2019

Chem. Sci.

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Section: Resultsmentioning

confidence: 84%

Nanobowls with controlled openings and interior holes driven by the synergy of hydrogen bonding and π–π interaction

Sun

Liu

2019

Chem. Sci.

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“…Figure shows the changes in the work function for (a) MoS 2 and (b) WS 2 depending on the material size. The onset of the secondary electron was determined by extrapolating the two solid lines from the background and the straight onset in the spectra . The work function of bulk MoS 2 was measured to be 4.6 eV.…”

Section: Resultsmentioning

confidence: 99%

“…The onset of the secondary electron was determined by extrapolating the two solid lines from the background and the straight onset in the spectra. 56 The work function of bulk MoS 2 was measured to be 4.6 eV. After exfoliation into nanosheets and nanodots, the work function of MoS 2 remains 4.6 eV.…”

Section: ■ Experimental Methodsmentioning

confidence: 98%

Size-Dependent Properties of Two-Dimensional MoS₂ and WS₂

et al. 2016

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The characteristic differences between MoS 2 and WS 2 nanosheets and nanodots are investigated. The nanosheets were formed by liquid-phase sonication, while the nanodots were formed by breaking the nanosheets through heating the solvent ethylene glycol. The nanosheets and nanodots were approximately 0.7−2 nm thick, with slight deviation. Most of the nanosheets were longer than 100 nm, and most of the nanodots were shorter than 5 nm. As the bulk materials were transformed into nanosheets and/or nanodots, the absorption peaks and Raman peaks shifted to shorter wavelengths. Photoluminescence peaks were observed at 500 and 445 nm in the MoS 2 and WS 2 samples smaller than 100 nm. In the X-ray diffraction spectra, only the (002) peak was present in the nanosheets, while no peak was detected for the nanodots due to their small size. No detectable differences between the nanosheets and nanodots were observed in the transmission electron micrographs, synchrotron radiation photoemission spectra, or work function measurements, suggesting that exfoliation did not affect the crystal structure or bonding configuration of MoS 2 and WS 2 . These results could potentially be used for the application of MoS 2 and WS 2 nanosheets and nanodots in optical devices, hydrogen evolution reaction catalysts, bioapplicable devices, and so on.

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Bottom‐Up Synthesis of MeS_x Nanodots for Optoelectronic Device Applications

Nguyen

Park

et al. 2016

Advanced Optical Materials

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WSx and MoSx nanodots are synthesized from (NH4)2WS4 and (NH4)2MoS4 precursors using a solvothermal method, and applied to organic photovoltaic cells (OPVs) and organic light emitting diodes (OLEDs) as hole injection layers (HILs). The optical band gaps of WSx and MoSx nanodots are 3.55 and 3.1 eV, respectively, and these nanodots show their strongest photoluminescence (PL) emission at 438 and 436 nm. The work functions of the nanodots increased from 4.3–4.4 to 5.0–5.1 eV following ultraviolet/ozone (UVO) treatment. By sandwiching thin layers of UVO‐treated WSx and MoSx as HILs, the power conversion efficiency of OPVs dramatically increases from 1.51% to 3.0% and 2.95%, comparable to that of poly(3,4 ethylenedioxythiophene):poly(styrene‐sulfonate) (PEDOT:PSS) based devices (3.23%). This increased OPV efficiency is believed to come from the increased work function, large band gap, and PL properties of nanodots. The UVO‐MoSx based OLED shows a higher maximum luminance efficiency (14.7 cd A−1) compared to PEDOT:PSS based devices (13.1 cd A−1). In addition, this study confirms that the stabilities of the OPV and OLEDs in air can be prolonged by using UVO‐treated WSx or MoSx nanodots as HILs. These results demonstrate the great potential of synthesized WSx or MoSx nanodots for use as HILs in optoelectronic devices.

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Aromatic substituents for prohibiting side-chain packing and π-π stacking in tin-cored tetrahedral stilbenoids

Cited by 7 publications

References 31 publications

Nanobowls with controlled openings and interior holes driven by the synergy of hydrogen bonding and π–π interaction

Nanobowls with controlled openings and interior holes driven by the synergy of hydrogen bonding and π–π interaction

Size-Dependent Properties of Two-Dimensional MoS₂ and WS₂

Bottom‐Up Synthesis of MeS_x Nanodots for Optoelectronic Device Applications

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Aromatic substituents for prohibiting side-chain packing and π-π stacking in tin-cored tetrahedral stilbenoids

Cited by 7 publications

References 31 publications

Nanobowls with controlled openings and interior holes driven by the synergy of hydrogen bonding and π–π interaction

Nanobowls with controlled openings and interior holes driven by the synergy of hydrogen bonding and π–π interaction

Size-Dependent Properties of Two-Dimensional MoS2 and WS2

Bottom‐Up Synthesis of MeSx Nanodots for Optoelectronic Device Applications

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Product

Resources

About

Size-Dependent Properties of Two-Dimensional MoS₂ and WS₂

Bottom‐Up Synthesis of MeS_x Nanodots for Optoelectronic Device Applications