ARPES spectra of polaron in the t–J model

Mishchenko, A. S.; Nagaosa, Naoto

doi:10.1016/j.jpcs.2005.10.039

Cited by 7 publications

(2 citation statements)

References 22 publications

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“…Analytic continuation of imaginary time functions to real frequencies is per-formed by a novel approximation free approach of stochastic optimization (SO) [45,50,51], circumventing difficulties of popular Maximal Enthropy method. Finally we focus on results of application of the DMC-SO machinery to various problems [52,53,54,55,56,57] The basic models, related to the polaronic objects in correlated systems, which can be solved by DMC-SO methods, are stated in the next Sect. It is followed in Sect.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Properties of Polarons in Strongly Correlated Systems by Exact Diagrammatic Monte Carlo Method

Mishchenko

Nagaosa

2007

Polarons in Advanced Materials

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Section: Introductionmentioning

confidence: 99%

Spectroscopic Properties of Polarons in Strongly Correlated Systems by Exact Diagrammatic Monte Carlo Method

Mishchenko

Nagaosa

2007

Polarons in Advanced Materials

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“…( 8) and ( 9). The exponential kernel K(y, x) = exp[−yx] was examined in [24,[37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55], and various kernels ranging from the Fermi distribution to the Matsubara frequency representation are considered in [56][57][58][59]. We test the applicability of the SOM to the kernels of Eqs.…”

Section: B Tests Of Som and Role Of Noise In Experimental Datamentioning

confidence: 99%

Distribution of localized states from fine analysis of electron spin resonance spectra of organic semiconductors: Physical meaning and methodology

2012

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We develop an analytical method for the processing of electron spin resonance (ESR) spectra. The goal is to obtain the distributions of trapped carriers over both their degree of localization and their binding energy in semiconductor crystals or films composed of regularly aligned organic molecules [Phys. Rev. Lett. 104, 056602 (2010)]. Our method has two steps. We first carry out a fine analysis of the shape of the ESR spectra due to the trapped carriers; this reveals the distribution of the trap density of the states over the degree of localization. This analysis is based on the reasonable assumption that the linewidth of the trapped carriers is predetermined by their degree of localization because of the hyperfine mechanism. We then transform the distribution over the degree of localization into a distribution over the binding energies. The transformation uses the relationships between the binding energies and the localization parameters of the trapped carriers. The particular relation for the system under study is obtained by the Holstein model for trapped polarons using a diagrammatic Monte Carlo analysis. We illustrate the application of the method to pentacene organic thin-film transistors.

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Intrinsic and Extrinsic Transport in Crystalline Organic Semiconductors: Electron‐Spin‐Resonance Study for Characterization of Localized States

Mishchenko

2021

Organic Semiconductors for Optoelectronics

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ARPES spectra of polaron in the t–J model

Cited by 7 publications

References 22 publications

Spectroscopic Properties of Polarons in Strongly Correlated Systems by Exact Diagrammatic Monte Carlo Method

Spectroscopic Properties of Polarons in Strongly Correlated Systems by Exact Diagrammatic Monte Carlo Method

Distribution of localized states from fine analysis of electron spin resonance spectra of organic semiconductors: Physical meaning and methodology

Intrinsic and Extrinsic Transport in Crystalline Organic Semiconductors: Electron‐Spin‐Resonance Study for Characterization of Localized States

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