Arrhenius results for the diffusion of Hg into CdTe

Ahmed, M.U.; Jones, E. D.; Mullin, J. B.; Stewart, N.M.

doi:10.1016/0022-0248(95)00698-2

Cited by 5 publications

(5 citation statements)

References 5 publications

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“…The two last ones proposed higher (1.9-2.0 eV) the activation energy value in comparison with one obtained in [37,38] by radiotracers. The difference between these two groups of experimental techniques is observation in first case of two-component profiles of Hg diffusivity with D 1 and D 2 according to erfcz.…”

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 86%

“…Though three temperature dependencies of In, Ga and Tl diffusivity intersect in the same point at T = 1390 K (i.e. in CdTe molten state), it can't be a solid base for a conclusion about the data fit to the NMR [37,38] Hg [39,40] *Zn [35] Zn [36,59] ln(D 0 , cm 2 /s) [24,26,27] Cu [25,28,29] *Ag [30] Ag [28,31] Au [34] ln(D Li [22] Na [23] Al [22] *Ga [41,42] In [23,43,48] *In [44][45][46][47] *Tl [49] *Ge [50] *Sn [51] ln(D T 0 (a) (b) Fig. 4 (a) The plot of the ln D 0 versus DE a for the diffusivity of the Groups I, III and IV impurities in CdTe crystals and thin films.…”

Section: Diffusion Of Ia Iiia and Iva Groups Impuritiesmentioning

confidence: 96%

“…Reviewing the data in Table 2, one should pay attention to evidence pointing towards a change in the slope of the Arrhenius' correlation within a certain temperature range (at 548 [37] and 614 K [38] for Hg diffusion; at 743 [42] and 673 K [47] for Ga and In, correspondingly, at 928 K [53] and at 753 K [54] for O and S, correspondingly). The underlying reason for these observations is not clear, however, it may be connected with structural transformations in the lattice.…”

Section: Diffusion Of Foreign Impurities In Cdtementioning

confidence: 99%

“…Diffusion of Hg in CdTe crystals was studied both by radiometry in [37,38] and two other methods (heavy-ion (40 MeV O 5+ ) back-scattering [39] and proton induced xray emission [40] ). The two last ones proposed higher (1.9-2.0 eV) the activation energy value in comparison with one obtained in [37,38] by radiotracers.…”

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 99%

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Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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Understanding of self-and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius' parameters (D=D 0 exp(2DE a /kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0 , and the activation energy, DE a , of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.

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Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 86%

Section: Diffusion Of Ia Iiia and Iva Groups Impuritiesmentioning

confidence: 96%

Section: Diffusion Of Foreign Impurities In Cdtementioning

confidence: 99%

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 99%

See 2 more Smart Citations

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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“…Results covering 100 to 700°C, i.e., to 1993, were reviewed in Ref. 51,52 Data in bulk material were derived from diffusion of Hg from the vapor into bulk CdTe. It is generally recognized that the compositional interdiffusivity, D , is a function of x Cd and based on high temperature results (> 400°C) D decreases exponentially with x Cd .…”

Section: Compositional Interdiffusionmentioning

confidence: 99%

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Capper¹,

Maxey²,

Jones³

et al. 1999

Journal of Elec Materi

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Low temperature thermal treatments of CdHgTe, normally in the presence of mercury vapor, are still used on both bulk samples and single and multi-layer epitaxial layers to modify or control the electrical properties. This paper reviews the recent literature reports in this area and develops the existing model to explain certain features of the p to n conversion process. A brief update on compositional interdiffusion at low temperatures is given which shows significant disagreement within literature values. In addition, the paper will describe and comment on some as yet unexplained results (interdiffusion and electrical behavior) following low temperature treatments in both liquid phase and metalorganic vapor phase epitaxial (LPE and MOVPE) layers.

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Diffusion in MCT

Shaw

2010

Mercury Cadmium Telluride

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Arrhenius results for the diffusion of Hg into CdTe

Cited by 5 publications

References 5 publications

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Diffusion in MCT

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