Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition

Na, Hyunseok; Kim, Hyun Jin; Yoon, Euijoon; Sone, Cheolsoo; Park, Yongjo

doi:10.1016/s0022-0248(02)01824-9

Cited by 13 publications

(18 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of GaN, the doping with As has been studied with respect to its luminescence behaviour [15][16][17][18][19][20][21][22] and, at higher concentrations, with regards to the formation of GaAs x N 1−x alloys and the related modification of the GaN band gap [17,21,[23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

View full text Add to dashboard Cite

We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive 73 As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. Arsenic in ZnO is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. In contrast, in GaN the preference of As for substitutional cation sites is less pronounced and about half of the implanted As atoms occupy Ga and the other half N sites. Apparently, the smaller size-mismatch between As and N and the chemical similarity of both elements make it feasible that As partly substitutes for N atoms.

show abstract

Section: Introductionmentioning

confidence: 99%

“…However, while, on the As-rich side of the phase diagram, it is possible to incorporate up to ~10-15% of N into cubic GaAs [27,28], on the N-rich side not more than ~1% of As in GaN have been achieved [23][24][25][26]. In the intermediate region usually the coexistence of hexagonal N-rich GaAsN and cubic As-rich GaNAs phases is observed.…”

Section: Introductionmentioning

confidence: 99%

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

View full text Add to dashboard Cite

show abstract

“…Up to now, this effect, while not negligible during the early stages of growth has not been verified and needs confirmation to our knowledge. It is reported that As atoms could replace Ga atomic sites in order to account for the observed 2.6 eV luminescence [14]. This effect suggests that the variation in the lattice parameter does probably not follow a linear variation with the As content, i.e Vegard's law is not obeyed.…”

Section: As In Ganmentioning

confidence: 99%

Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs _{1−
x} N _x /GaAs

Dumont¹,

Auvray

Monteil

et al. 2003

phys. stat. sol. (c)

View full text Add to dashboard Cite

A phase separation with a periodic spontaneous vertical composition modulation in GaAs 0.97 N 0.03 /GaAs epilayers is observed by transmission electron microscopy. At growth temperatures of 530 -550 °C a spatial period of 10 -15 nm is found. Unstable growth near the solubility limit is expected to occur at topographical defects such as surface steps which may induce a strong local variation in the N adatoms concentration. Consequently the solid content is affected.1 Introduction Growth of homogeneous phase for InGaAsN and GaNAs alloys is technologically important as both compounds are key materials for future optical devices from 1 eV to 3 eV energy range [1]. The N-solubility in the GaAs crystal lattice, resp. As in GaN, is low due to the 60% size mismatch between As and N atomic radii. Both internal strain and growth conditions do affect the phase diagram of group-III nitrides. Spontaneous superstructures have been seen previously in epitaxial films including lateral and vertical composition modulation (VCM) in InGaN, AlGaN leading to a two phase system [2 -4]. We show here some experimental results on phase separation in low nitrogen content GaAsN/GaAs epitaxial layers where a spontaneous superlattice is formed by vertical composition modulation in the N concentration. The growth temperature and the growth rate were varied. We first address the question of solubility. Different mechanisms leading to the VCM are discussed. Added to a limited solubility, it appears that the substrate misorientation, high vapor phase supersaturation and high desorption rate of N are key parameters.

show abstract

“…Unfortunately the growth of GaAs 1−x N x compounds encounters significant difficulties, one of the reasons being that GaAs crystallizes in the cubic zinc blende structure while the most stable polytype of GaN is hexagonal wurtzite. However, while, on the As-rich side of the phase diagram, it is possible to incorporate up to ~10-15% of N into cubic GaAs [3,4], on the N-rich side not more than ~1% of As in GaN have been achieved [5][6][7][8]. In the intermediate region, usually the coexistence of hexagonal N-rich GaAsN and cubic As-rich GaNAs phases is observed.…”

mentioning

confidence: 99%

Amphoteric arsenic in GaN

Wahl¹,

Correia²,

Araújo³

et al. 2007

Applied Physics Letters

View full text Add to dashboard Cite

We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive 73 As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As Ga "antisites" are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called "miscibility gap" in ternary GaAs 1−x N x compounds, which cannot be grown with a single phase for values of x in the range 0. The growth and properties of ternary semiconductors of the nitride family have been under intense investigation ever since nitrides emerged as blue-light emitting devices in the 1990s. The particular interest in the ternary nitrides results from the fact that they allow adjusting the semiconductor band gap to values not available in pure compounds. One of the ternary systems under study is GaAs 1−x N x , which shows some intriguing properties such as large band gap bowing parameter [1][2][3]. Unfortunately the growth of GaAs 1−x N x compounds encounters significant difficulties, one of the reasons being that GaAs crystallizes in the cubic zinc blende structure while the most stable polytype of GaN is hexagonal wurtzite. However, while, on the As-rich side of the phase diagram, it is possible to incorporate up to ~10-15% of N into cubic GaAs [3,4], on the N-rich side not more than ~1% of As in GaN have been achieved [5][6][7][8]. In the intermediate region, usually the coexistence of hexagonal N-rich GaAsN and cubic As-rich GaNAs phases is observed.GaN which is lightly As-doped is also highly interesting due to the fact that it shows intense blue luminescence centered around 2.6 eV, as observed already many years ago in Asimplanted GaN by Pankove and Hutchby [9] and Metcalfe et al [10], and subsequently also found in GaN doped with As during growth [5,[11][12][13][14][15][16]. The chemical nature of the 2.6 eV blue luminescence and the fact that it results from optical centers involving one As atom only was unambiguously proven by means of the radiotracer photoluminescence (PL) work of Stötzler et al [17], who studied the luminescence along the radioactive decay chains 71 As→ 71 Ge→ 71 Ga and 72 Se→ 72 As→ 72 Ge. Following the ion implantation of 71 As and 72 Se they observed the intensity of the 2.6 eV luminescence to scale with the amount of radioactive 71 As and 72 As resulting from radioactive decay.The amphoteric nature of As in GaN was first proposed by Guido et al [18], who suggested that As could fill up both Ga and N vacancies and thus reduce yellow band emission and carrier scattering in GaN. Subsequently, the 2.6 eV blue luminescence [12,[14][15][16]19] and a deep level ~0.8 eV below the conduction band have been attributed to As Ga [20,21]. While there are indications that the As Ga :As N ratio changes with the overall Ga:N:As stoichiometry [13,15], so far no direct evidence for so-called As Ga "anti-sit...

show abstract

Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition

Cited by 13 publications

References 9 publications

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs _{1−
x} N _x /GaAs

Amphoteric arsenic in GaN

Contact Info

Product

Resources

About

Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition

Cited by 13 publications

References 9 publications

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs 1− x N x /GaAs

Amphoteric arsenic in GaN

Contact Info

Product

Resources

About

Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs _{1−
x} N _x /GaAs