2014
DOI: 10.1080/19443994.2014.927795
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Arsenic removal of high-arsenic wastewater from gallium arsenide semiconductor production by enhanced two-stage treatment

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Cited by 6 publications
(3 citation statements)
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“…As-product manufacturing will also contribute to contamination of soil and water bodies, i.e. contamination from a pesticide manufacturing facility have led to As aqueous concentrations in groundwater of up to 0.2 mM (O’day et al 2004); the wastewater effluent from a Gallium Arsenide semiconductor production facility was reported to have an As concentration of 0.8 mM (Li et al 2015). Exposure to high As levels have obligated many microorganisms to adapt to the inhibitory effects of As, and develop efficient detoxifying mechanisms ( i.e., precipitation, chelation, compartimentalization) (Slyemi and Bonnefoy 2012) and As extrusion (Cervantes et al 1994).…”
Section: Introductionmentioning
confidence: 99%
“…As-product manufacturing will also contribute to contamination of soil and water bodies, i.e. contamination from a pesticide manufacturing facility have led to As aqueous concentrations in groundwater of up to 0.2 mM (O’day et al 2004); the wastewater effluent from a Gallium Arsenide semiconductor production facility was reported to have an As concentration of 0.8 mM (Li et al 2015). Exposure to high As levels have obligated many microorganisms to adapt to the inhibitory effects of As, and develop efficient detoxifying mechanisms ( i.e., precipitation, chelation, compartimentalization) (Slyemi and Bonnefoy 2012) and As extrusion (Cervantes et al 1994).…”
Section: Introductionmentioning
confidence: 99%
“…As shown in Figure 2C, compared to manganese oxide alone (0.2 g L −1 ), As(III) oxidation by manganese oxide in the presence of PMS considerably increased to 95.9% after 30 min. The chemical oxidants of H 2 O 2 and NaClO, which had been investigated for As(III) oxidation in previous literature, were also employed to evaluate their As(III) oxidation activities for comparing with the manganese oxide/PMS system. After 30 min, the As(III) oxidation rates of H 2 O 2 and NaClO were 22.6% and 30.3%, respectively (Figure 2C), which were far lower than that of manganese oxide in the presence of PMS.…”
Section: Resultsmentioning
confidence: 99%
“…Relatively high concentrations of As have been found in effluent streams of electronic fabrication facilities that utilize III/V materials in several countries ,000 mg/L). 9,12,13 High levels of arsenide particulates are also expected in CMP waste streams, 14,15 but the concentrations found in these effluents have not been reported to date. The CMP effluents are treated at semiconductor facilities to remove regulated pollutants (eg, copper, soluble As) prior to discharge to municipal sewer systems, but current treatment systems are not designed to remove nano-sized Ga-and In arsenides or other Ga-and In-containing NPs.…”
Section: Introductionmentioning
confidence: 99%